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Results: 1-16 |
Results: 16
CONTINUOUS-WAVE OPERATION AT 250 K OF INGAN MULTIPLE-QUANTUM-WELL LASER-DIODES GROWN ON 6H-SIC WITH VERTICAL CONDUCTING STRUCTURE
Authors: SOEJIMA R KURAMATA A KUBOTA S DOMEN K HORINO K TANAHASHI T
Citation: R. Soejima et al., CONTINUOUS-WAVE OPERATION AT 250 K OF INGAN MULTIPLE-QUANTUM-WELL LASER-DIODES GROWN ON 6H-SIC WITH VERTICAL CONDUCTING STRUCTURE, JPN J A P 2, 37(10B), 1998, pp. 1205-1207
LASING MECHANISM OF INGAN-GAN-ALGAN MQW LASER-DIODE GROWN ON SIC BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 4, PG 490, 1998)
Authors: DOMEN K KURAMATA A SOEJIMA R HORINO K KUBOTA S TANAHASHI T
Citation: K. Domen et al., LASING MECHANISM OF INGAN-GAN-ALGAN MQW LASER-DIODE GROWN ON SIC BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 4, PG 490, 1998), IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 803-803
LASING MECHANISM OF INGAN-GAN-ALGAN MQW LASER-DIODE GROWN ON SIC BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY
Authors: DOMEN K KURAMATA A SOEJIMA R HORINO K KUBOTA S TANAHASHI T
Citation: K. Domen et al., LASING MECHANISM OF INGAN-GAN-ALGAN MQW LASER-DIODE GROWN ON SIC BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 490-497
INGAN LASER-DIODE GROWN ON 6H-SIC SUBSTRATE USING LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
Authors: KURAMATA A DOMEN K SOEJIMA R HORINO K KUBOTA S TANAHASHI T
Citation: A. Kuramata et al., INGAN LASER-DIODE GROWN ON 6H-SIC SUBSTRATE USING LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 826-830
INTERWELL INHOMOGENEITY OF CARRIER INJECTION IN INGAN GAN/ALGAN MULTIQUANTUM-WELL LASERS/
Authors: DOMEN K SOEJIMA R KURAMATA A HORINO K KUBOTA S TANAHASHI T
Citation: K. Domen et al., INTERWELL INHOMOGENEITY OF CARRIER INJECTION IN INGAN GAN/ALGAN MULTIQUANTUM-WELL LASERS/, Applied physics letters, 73(19), 1998, pp. 2775-2777
LASING MECHANISM OF INGAN GAN/ALGAN MULTIQUANTUM-WELL LASER-DIODE (VOL 72, PG 1359, 1998)/
Authors: DOMEN K KURAMATA A TANAHASHI T
Citation: K. Domen et al., LASING MECHANISM OF INGAN GAN/ALGAN MULTIQUANTUM-WELL LASER-DIODE (VOL 72, PG 1359, 1998)/, Applied physics letters, 72(21), 1998, pp. 2766-2766
LASING MECHANISM OF INGAN GAN/ALGAN MULTIQUANTUM-WELL LASER-DIODE/
Authors: DOMEN K KURAMATA A TANAHASHI T
Citation: K. Domen et al., LASING MECHANISM OF INGAN GAN/ALGAN MULTIQUANTUM-WELL LASER-DIODE/, Applied physics letters, 72(11), 1998, pp. 1359-1361
INGAN LASER-DIODE GROWN ON 6H-SIC SUBSTRATE USING LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY
Authors: KURAMATA A DOMEN K SOEJIMA R HORINO K KUBOTA S TANAHASHI T
Citation: A. Kuramata et al., INGAN LASER-DIODE GROWN ON 6H-SIC SUBSTRATE USING LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY, JPN J A P 2, 36(9AB), 1997, pp. 1130-1132
OPTICAL GAIN FOR WURTZITE GAN WITH ANISOTROPIC STRAIN IN C-PLANE
Authors: DOMEN K HORINO K KURAMATA A TANAHASHI T
Citation: K. Domen et al., OPTICAL GAIN FOR WURTZITE GAN WITH ANISOTROPIC STRAIN IN C-PLANE, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 450-455
PROPERTIES OF GAN EPITAXIAL LAYER GROWN ON (111)MGAL2O4 SUBSTRATE
Authors: KURAMATA A HORINO K DOMEN K TANAHASHI T
Citation: A. Kuramata et al., PROPERTIES OF GAN EPITAXIAL LAYER GROWN ON (111)MGAL2O4 SUBSTRATE, Solid-state electronics, 41(2), 1997, pp. 251-254
BIAXIAL STRAIN DEPENDENCE OF EXCITON RESONANCE ENERGIES IN WURTZITE GAN
Authors: SHIKANAI A AZUHATA T SOTA T CHICHIBU S KURAMATA A HORINO K NAKAMURA S
Citation: A. Shikanai et al., BIAXIAL STRAIN DEPENDENCE OF EXCITON RESONANCE ENERGIES IN WURTZITE GAN, Journal of applied physics, 81(1), 1997, pp. 417-424
ANALYSIS OF POLARIZATION ANISOTROPY ALONG THE C-AXIS IN THE PHOTOLUMINESCENCE OF WURTZITE GAN
Authors: DOMEN K HORINO K KURAMATA A TANAHASHI T
Citation: K. Domen et al., ANALYSIS OF POLARIZATION ANISOTROPY ALONG THE C-AXIS IN THE PHOTOLUMINESCENCE OF WURTZITE GAN, Applied physics letters, 71(14), 1997, pp. 1996-1998
OPTICAL GAIN FOR WURTZITE GAN WITH ANISOTROPIC STRAIN IN C-PLANE
Authors: DOMEN K HORINO K KURAMATA A TANAHASHI T
Citation: K. Domen et al., OPTICAL GAIN FOR WURTZITE GAN WITH ANISOTROPIC STRAIN IN C-PLANE, Applied physics letters, 70(8), 1997, pp. 987-989
GAIN ANALYSIS FOR SURFACE EMISSION BY OPTICAL-PUMPING OF WURTZITE GAN
Authors: DOMEN K KONDO K KURAMATA A TANAHASHI T
Citation: K. Domen et al., GAIN ANALYSIS FOR SURFACE EMISSION BY OPTICAL-PUMPING OF WURTZITE GAN, Applied physics letters, 69(1), 1996, pp. 94-96
EFFECTS OF BIAXIAL STRAIN ON EXCITON RESONANCE ENERGIES OF HEXAGONAL GAN HETEROEPITAXIAL LAYERS
Authors: CHICHIBU S SHIKANAI A AZUHATA T SOTA T KURAMATA A HORINO K NAKAMURA S
Citation: S. Chichibu et al., EFFECTS OF BIAXIAL STRAIN ON EXCITON RESONANCE ENERGIES OF HEXAGONAL GAN HETEROEPITAXIAL LAYERS, Applied physics letters, 68(26), 1996, pp. 3766-3768
HIGH-QUALITY GAN EPITAXIAL LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON (111) MGAL2O4 SUBSTRATE
Authors: KURAMATA A HORINO K DOMEN K SHINOHARA K TANAHASHI T
Citation: A. Kuramata et al., HIGH-QUALITY GAN EPITAXIAL LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON (111) MGAL2O4 SUBSTRATE, Applied physics letters, 67(17), 1995, pp. 2521-2523
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