Authors:
GALITSYN YG
MARAKHOVKA II
MOSHCHENKO SP
KURYSHEV GL
POSHEVNEV VI
MANSUROV VG
Citation: Yg. Galitsyn et al., INTERACTION KINETICS OF AS-4-C-GA(IN) CLU STERS ON (001)GAAS AND INASSURFACES, Doklady Akademii nauk. Rossijskaa akademia nauk, 359(1), 1998, pp. 48-54
Authors:
KALAMEITSEV AV
ROMANOV DA
KOVCHAVTSEV AP
KURYSHEV GL
POSTNIKOV KO
SUBBOTIN IM
Citation: Av. Kalameitsev et al., NEGATIVE DIFFERENTIAL RESISTIVITY OF A NONIDEAL SCHOTTKY-BARRIER BASED ON INDIUM ARSENIDE, Semiconductors, 31(3), 1997, pp. 308-314
Authors:
ZAKHAROV IM
KOVCHAVTZEV AP
KURYSHEV GL
PREOBRAGENSKY VV
SEMYAGIN BR
Citation: Im. Zakharov et al., INELASTIC RESONANCE TUNNELING OF ELECTRONS THROUGH THE TRIPLE BARRIERGAAS ALXGA1-XAS HETEROSTRUCTURE UNDER INFRARED ELECTROMAGNETIC-FIELD EXCITATION/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 53-61
Authors:
GERASIMENKO NN
KURYSHEV GL
MYASNIKOV AM
OBODNIKOV VI
VERNER IV
Citation: Nn. Gerasimenko et al., DISTRIBUTION OF IMPURITIES IMPLANTED IN INSB AND INAS BEFORE AND AFTER ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 446-450
Authors:
KORNYUSHKIN NA
VALISHEVA NA
KOVCHAVTSEV AP
KURYSHEV GL
Citation: Na. Kornyushkin et al., EFFECT OF INTERFACE PROPERTIES AND DEEP LEVELS IN THE BAND-GAP ON THECAPACITANCE-VOLTAGE CHARACTERISTICS OF INDIUM ARSENIDE MIS STRUCTURES, Semiconductors, 30(5), 1996, pp. 487-488
Authors:
GERASIMENKO NN
KHRYASHCHEV GS
KURYSHEV GL
MYASNIKOV AM
OBODNIKOV VI
Citation: Nn. Gerasimenko et al., SIMS STUDY ON REDISTRIBUTION OF IMPLANTED IMPURITIES IN INSB AND INASDURING POSTIMPLANTATION ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(3-4), 1996, pp. 281-284
Authors:
BRAGINSKY LS
BASKIN EM
KOVCHAVTSEV AP
KURYSHEV GL
POSTNIKOV KO
SUBBOTIN IM
Citation: Ls. Braginsky et al., EMISSION OF SHORT-WAVELENGTH PHONONS IN TUNNELING THROUGH SCHOTTKY BARRIERS, Physical review. B, Condensed matter, 51(24), 1995, pp. 17718-17727
Authors:
KURYSHEV GL
MYASNIKOV AM
OBODNIKOV VI
SAFRONOV LN
KHRYASCHEV GS
Citation: Gl. Kuryshev et al., REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING, Semiconductors, 28(3), 1994, pp. 267-269