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Results: 1-8 |
Results: 8
INTERACTION KINETICS OF AS-4-C-GA(IN) CLU STERS ON (001)GAAS AND INASSURFACES
Authors: GALITSYN YG MARAKHOVKA II MOSHCHENKO SP KURYSHEV GL POSHEVNEV VI MANSUROV VG
Citation: Yg. Galitsyn et al., INTERACTION KINETICS OF AS-4-C-GA(IN) CLU STERS ON (001)GAAS AND INASSURFACES, Doklady Akademii nauk. Rossijskaa akademia nauk, 359(1), 1998, pp. 48-54
NEGATIVE DIFFERENTIAL RESISTIVITY OF A NONIDEAL SCHOTTKY-BARRIER BASED ON INDIUM ARSENIDE
Authors: KALAMEITSEV AV ROMANOV DA KOVCHAVTSEV AP KURYSHEV GL POSTNIKOV KO SUBBOTIN IM
Citation: Av. Kalameitsev et al., NEGATIVE DIFFERENTIAL RESISTIVITY OF A NONIDEAL SCHOTTKY-BARRIER BASED ON INDIUM ARSENIDE, Semiconductors, 31(3), 1997, pp. 308-314
INELASTIC RESONANCE TUNNELING OF ELECTRONS THROUGH THE TRIPLE BARRIERGAAS ALXGA1-XAS HETEROSTRUCTURE UNDER INFRARED ELECTROMAGNETIC-FIELD EXCITATION/
Authors: ZAKHAROV IM KOVCHAVTZEV AP KURYSHEV GL PREOBRAGENSKY VV SEMYAGIN BR
Citation: Im. Zakharov et al., INELASTIC RESONANCE TUNNELING OF ELECTRONS THROUGH THE TRIPLE BARRIERGAAS ALXGA1-XAS HETEROSTRUCTURE UNDER INFRARED ELECTROMAGNETIC-FIELD EXCITATION/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 53-61
DISTRIBUTION OF IMPURITIES IMPLANTED IN INSB AND INAS BEFORE AND AFTER ANNEALING
Authors: GERASIMENKO NN KURYSHEV GL MYASNIKOV AM OBODNIKOV VI VERNER IV
Citation: Nn. Gerasimenko et al., DISTRIBUTION OF IMPURITIES IMPLANTED IN INSB AND INAS BEFORE AND AFTER ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 446-450
EFFECT OF INTERFACE PROPERTIES AND DEEP LEVELS IN THE BAND-GAP ON THECAPACITANCE-VOLTAGE CHARACTERISTICS OF INDIUM ARSENIDE MIS STRUCTURES
Authors: KORNYUSHKIN NA VALISHEVA NA KOVCHAVTSEV AP KURYSHEV GL
Citation: Na. Kornyushkin et al., EFFECT OF INTERFACE PROPERTIES AND DEEP LEVELS IN THE BAND-GAP ON THECAPACITANCE-VOLTAGE CHARACTERISTICS OF INDIUM ARSENIDE MIS STRUCTURES, Semiconductors, 30(5), 1996, pp. 487-488
SIMS STUDY ON REDISTRIBUTION OF IMPLANTED IMPURITIES IN INSB AND INASDURING POSTIMPLANTATION ANNEALING
Authors: GERASIMENKO NN KHRYASHCHEV GS KURYSHEV GL MYASNIKOV AM OBODNIKOV VI
Citation: Nn. Gerasimenko et al., SIMS STUDY ON REDISTRIBUTION OF IMPLANTED IMPURITIES IN INSB AND INASDURING POSTIMPLANTATION ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(3-4), 1996, pp. 281-284
EMISSION OF SHORT-WAVELENGTH PHONONS IN TUNNELING THROUGH SCHOTTKY BARRIERS
Authors: BRAGINSKY LS BASKIN EM KOVCHAVTSEV AP KURYSHEV GL POSTNIKOV KO SUBBOTIN IM
Citation: Ls. Braginsky et al., EMISSION OF SHORT-WAVELENGTH PHONONS IN TUNNELING THROUGH SCHOTTKY BARRIERS, Physical review. B, Condensed matter, 51(24), 1995, pp. 17718-17727
REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING
Authors: KURYSHEV GL MYASNIKOV AM OBODNIKOV VI SAFRONOV LN KHRYASCHEV GS
Citation: Gl. Kuryshev et al., REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING, Semiconductors, 28(3), 1994, pp. 267-269
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