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Results: 1-11 |
Results: 11
MAGNETOTRANSPORT OF INAS-QUANTUM WELLS USING INP0.69SB0.31 AS A BARRIER MATERIAL
Authors: SCHAPERS T ENGELS G LUTH H BEHET M MOULIN D KUSTERS AM HEUKEN M HEIME K
Citation: T. Schapers et al., MAGNETOTRANSPORT OF INAS-QUANTUM WELLS USING INP0.69SB0.31 AS A BARRIER MATERIAL, Superlattices and microstructures, 23(2), 1998, pp. 307-313
AL-FREE INP-BASED HIGH-ELECTRON-MOBILITY TRANSISTORS - DESIGN, FABRICATION AND PERFORMANCE
Authors: KUSTERS AM HEIME K
Citation: Am. Kusters et K. Heime, AL-FREE INP-BASED HIGH-ELECTRON-MOBILITY TRANSISTORS - DESIGN, FABRICATION AND PERFORMANCE, Solid-state electronics, 41(8), 1997, pp. 1159-1170
MOVPE GROWTH OF III-V COMPOUNDS FOR OPTOELECTRONIC AND ELECTRONIC APPLICATIONS
Authors: BEHET M HOVEL R KOHL A KUSTERS AM OPITZ B HEIME K
Citation: M. Behet et al., MOVPE GROWTH OF III-V COMPOUNDS FOR OPTOELECTRONIC AND ELECTRONIC APPLICATIONS, Microelectronics, 27(4-5), 1996, pp. 297-334
SUB-HALF-MICROMETER PSEUDOMORPHIC INP INXGA1-XAS/INP HEMT ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.81) WITH VERY HIGH F(T) VALUES/
Authors: KUSTERS AM WULLER R GEELEN HJ KOHL A HEIME K
Citation: Am. Kusters et al., SUB-HALF-MICROMETER PSEUDOMORPHIC INP INXGA1-XAS/INP HEMT ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.81) WITH VERY HIGH F(T) VALUES/, IEEE electron device letters, 16(9), 1995, pp. 396-398
CHARGE COLLECTION EFFICIENCIES AND REVERSE CURRENT DENSITIES OF GAAS DETECTORS
Authors: BRAUNSCHWEIG W KUBICKI T LUBELSMEYER K KUSTERS AM ORTMANNS J PANDOULAS D SYBEN O TOPOROWSKY M WILMS T WITTMER B XIAO WJ
Citation: W. Braunschweig et al., CHARGE COLLECTION EFFICIENCIES AND REVERSE CURRENT DENSITIES OF GAAS DETECTORS, Nuclear physics. B, 1995, pp. 391-396
HIGH-PERFORMANCE AL-FREE IN0.75GA0.25P INP/INXGA1-XAS/INP (X-GREATER-THAN-OR-EQUAL-TO-53-PERCENT) BACKSIDE-DOPED SPLIT-CHANNEL HFETS WITH 0.25-MU-M T-GATES/
Authors: KUSTERS AM PULS C WULLER R BEHRES A KOHL A SOMMER V HEIME K
Citation: Am. Kusters et al., HIGH-PERFORMANCE AL-FREE IN0.75GA0.25P INP/INXGA1-XAS/INP (X-GREATER-THAN-OR-EQUAL-TO-53-PERCENT) BACKSIDE-DOPED SPLIT-CHANNEL HFETS WITH 0.25-MU-M T-GATES/, Electronics Letters, 31(5), 1995, pp. 409-411
LOW-FIELD AND HIGH-FIELD TRANSPORT-PROPERTIES OF PSEUDOMORPHIC IN(X)GA(1-X)AS INP ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.82) P-TYPEMODULATION-DOPED SINGLE-QUANTUM-WELL STRUCTURES/
Authors: KUSTERS AM KOHL A HEIME K SCHAPERS T UHLISCH D LENGELER B LUTH H
Citation: Am. Kusters et al., LOW-FIELD AND HIGH-FIELD TRANSPORT-PROPERTIES OF PSEUDOMORPHIC IN(X)GA(1-X)AS INP ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.82) P-TYPEMODULATION-DOPED SINGLE-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 75(7), 1994, pp. 3507-3515
INPLANE EFFECTIVE MASSES AND QUANTUM SCATTERING TIMES OF ELECTRONS INNARROW MODULATION-DOPED INGAAS INP QUANTUM-WELLS/
Authors: WIESNER U PILLATH J BAUHOFER W KOHL A KUSTERS AM BRITTNER S HEIME K
Citation: U. Wiesner et al., INPLANE EFFECTIVE MASSES AND QUANTUM SCATTERING TIMES OF ELECTRONS INNARROW MODULATION-DOPED INGAAS INP QUANTUM-WELLS/, Applied physics letters, 64(19), 1994, pp. 2520-2522
N-GA0,47IN0,53AS LOW DARK CURRENT HIGH-SP EED MSM PHOTODETECTORS
Authors: AVERIN SV KOHL A MULLER R KUSTERS AM WISSER J HEIME K
Citation: Sv. Averin et al., N-GA0,47IN0,53AS LOW DARK CURRENT HIGH-SP EED MSM PHOTODETECTORS, RADIOTEK EL, 38(5), 1993, pp. 939-944
OPTIMIZED DOUBLE-HETEROJUNCTION PSEUDOMORPHIC INP INXGA1-XAS/INP(0.64-LESS-THAN-X-LESS-THAN-0.82) P-MODFETS AND THE ROLE OF STRAIN IN THEIRDESIGN/
Authors: KUSTERS AM KOHL A SOMMER V MULLER R HEIME K
Citation: Am. Kusters et al., OPTIMIZED DOUBLE-HETEROJUNCTION PSEUDOMORPHIC INP INXGA1-XAS/INP(0.64-LESS-THAN-X-LESS-THAN-0.82) P-MODFETS AND THE ROLE OF STRAIN IN THEIRDESIGN/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2164-2170
0.5 MU-M GATE LENGTH INP IN0.75GA0.25AS/INP PSEUDOMORPHIC HEMT WITH HIGH DC AND RF PERFORMANCE/
Authors: KUSTERS AM FUNKE T SOMMER V WULLER R BRITTNER S KOHL A HEIME K
Citation: Am. Kusters et al., 0.5 MU-M GATE LENGTH INP IN0.75GA0.25AS/INP PSEUDOMORPHIC HEMT WITH HIGH DC AND RF PERFORMANCE/, Electronics Letters, 29(10), 1993, pp. 841-842
Risultati: 1-11 |