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Results:
1-9
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Results: 9
Authors:
BIEG B
KUZMINSKI S
Citation: B. Bieg et S. Kuzminski, INFLUENCE OF TEMPERATURE ON SURFACE-POTENTIAL BARRIER OF CD0.99MN0.01TE-GA, Vacuum, 48(3-4), 1997, pp. 265-267
Authors:
CZEKALAMUKALLED Z
KUZMINSKI S
PLACZEKPOPKO E
SZATKOWSKI J
KOZLOWSKI J
JEDRAL L
Citation: Z. Czekalamukalled et al., HIGH-RESOLUTION DIFFRACTION AND DLTS INVESTIGATION RESULTS OF THE EPITAXIAL GA(1-X)AL(X)S GAAS LAYERS PRODUCED WITH THE MOCVD METHOD/, Vacuum, 48(3-4), 1997, pp. 269-271
Authors:
SZATKOWSKI J
PLACZEKPOPKO E
HAJDUSIANEK A
KUZMINSKI S
BIEG B
BECLA P
Citation: J. Szatkowski et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF CDMNTE, Acta Physica Polonica. A, 87(2), 1995, pp. 387-390
Authors:
BIEG B
KUZMINSKI S
SZATKOWSKI J
Citation: B. Bieg et al., INFLUENCE OF ETCHING ON THE SURFACE-PROPERTIES OF CD0.99MN0.01TE GALLIUM DOPED, Vacuum, 46(5-6), 1995, pp. 481-483
Authors:
CZEKALAMUKALLED Z
KUZMINSKI S
TLACZALA M
Citation: Z. Czekalamukalled et al., PHOTOELECTRONIC PROPERTIES OF THE GAAS, SI EPITAXIAL LAYERS ON THE GAAS SUBSTRATE, Vacuum, 46(5-6), 1995, pp. 489-491
Authors:
KUZMINSKI S
PATER K
SZAYNOK AT
Citation: S. Kuzminski et al., INFLUENCE OF PRODUCTION TECHNOLOGY ON SURFACE-PROPERTIES OF CD0.85MN0.15TE INTRINSIC AND GALLIUM DOPED, Vacuum, 46(5-6), 1995, pp. 501-503
Authors:
SZATKOWSKI J
PLACZEKPOPKO E
BIEG B
HAJDUSIANEK A
KUZMINSKI S
Citation: J. Szatkowski et al., ELECTRICAL CHARACTERIZATION OF AU SCHOTTKY CONTACT ON N-TYPE CD0.99MN0.01TE, Vacuum, 46(5-6), 1995, pp. 545-546
Authors:
BIEG B
KUZMINSKI S
Citation: B. Bieg et S. Kuzminski, INFLUENCE OF GALLIUM DOPING ON SURFACE-PROPERTIES OF CD0.99MN0.01TE, Vacuum, 45(2-3), 1994, pp. 171-173
Authors:
KUZMINSKI S
PATER K
SZAYNOK AT
Citation: S. Kuzminski et al., ELECTROOPTICAL PROPERTIES OF A CD1-XFEXTE SURFACE-LAYER, Vacuum, 45(2-3), 1994, pp. 195-197
Risultati:
1-9
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