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Results: 1-10 |
Results: 10
DEEP-LEVEL OPTICAL SPECTROSCOPY OF ZNTE
Authors: KVIT AV MEDVEDEV SA KLEVKOV YV ZAITSEV VV ONISHCHENKO EE KLOKOV AV BAGAEV VS TSIKUNOV AV PERESTORONIN AV YAKIMOV MV
Citation: Av. Kvit et al., DEEP-LEVEL OPTICAL SPECTROSCOPY OF ZNTE, Physics of the solid state, 40(6), 1998, pp. 924-929
THE STRUCTURE OF POROUS GALLIUM-PHOSPHIDE
Authors: ZAVARITSKAYA TN KVIT AV MELNIK NN KARAVANSKII VA
Citation: Tn. Zavaritskaya et al., THE STRUCTURE OF POROUS GALLIUM-PHOSPHIDE, Semiconductors, 32(2), 1998, pp. 213-217
STUDIES OF NANOSCALE STRUCTURE AND ITS TRANSFORMATION IN PULSED-LASERDEPOSITED DENSE DIAMOND-LIKE CARBON-FILMS
Authors: APAKINA VN KARUZSKII AL KOGAN MS KVIT AV MELNIK NN MITYAGIN YA MURZIN VN ORLIKOVSKY AA PERESTORONIN AV TKACHENKO SD VOLCHKOV NA
Citation: Vn. Apakina et al., STUDIES OF NANOSCALE STRUCTURE AND ITS TRANSFORMATION IN PULSED-LASERDEPOSITED DENSE DIAMOND-LIKE CARBON-FILMS, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 564-568
LONG-DISTANCE AND SHORT-DISTANCE ORDERING OF THE METAL CORES OF GIANTPD CLUSTERS
Authors: VOLKOV VV VANTENDELOO G TSIRKOV GA CHERKASHINA NV VARGAFTIK MN MOISEEV II NOVOTORTSEV VM KVIT AV CHUVILIN AL
Citation: Vv. Volkov et al., LONG-DISTANCE AND SHORT-DISTANCE ORDERING OF THE METAL CORES OF GIANTPD CLUSTERS, Journal of crystal growth, 163(4), 1996, pp. 377-387
HIGH QUANTUM EFFICIENCY SCHOTTKY DIODE PHOTODETECTOR ON THE BASE OF ULTRATHIN GAAS-ON-SI FILM
Authors: JOSHKIN VA PAVLENKO VN KVIT AV OKTYABRSKY SR
Citation: Va. Joshkin et al., HIGH QUANTUM EFFICIENCY SCHOTTKY DIODE PHOTODETECTOR ON THE BASE OF ULTRATHIN GAAS-ON-SI FILM, Journal of applied physics, 79(7), 1996, pp. 3774-3777
PALLADIUM-561 GIANT CLUSTERS - CHEMICAL ASPECTS OF SELF-ORGANIZATION ON A NANO LEVEL
Authors: MOISEEV II VARGAFTIK MN VOLKOV VV TSIRKOV GA CHERKASHINA NV NOVOTORTSEV VM ELLERT OG PETRUNENKO IA CHUVILIN AL KVIT AV
Citation: Ii. Moiseev et al., PALLADIUM-561 GIANT CLUSTERS - CHEMICAL ASPECTS OF SELF-ORGANIZATION ON A NANO LEVEL, Mendeleev communications, (3), 1995, pp. 87-89
EVIDENCE FOR QUANTUM CONFINEMENT IN POROUS SILICON FROM PHOTOLUMINESCENCE MEASUREMENTS
Authors: JOSHKIN VA NAIDENKOV MN PAVLENKO VN KVIT AV OKTYABRSKY SR
Citation: Va. Joshkin et al., EVIDENCE FOR QUANTUM CONFINEMENT IN POROUS SILICON FROM PHOTOLUMINESCENCE MEASUREMENTS, Physical review. B, Condensed matter, 52(16), 1995, pp. 12102-12107
CHARACTERIZATION OF THE Z LUMINESCENCE SYSTEM IN HIGH-PURITY CDTE
Authors: KVIT AV KLEVKOV YV OKTYABRSKY SR TSIKUNOV AV ZHURKIN BG
Citation: Av. Kvit et al., CHARACTERIZATION OF THE Z LUMINESCENCE SYSTEM IN HIGH-PURITY CDTE, Materials science & engineering. B, Solid-state materials for advanced technology, 26(1), 1994, pp. 1-5
REDISTRIBUTION AND INCORPORATION OF SI IN GAAS DUE TO INDIUM DOPING
Authors: JOSHKIN VA KVIT AV GIVARGIZOV IE ORLIKOVSKY AA ZHURKIN BG
Citation: Va. Joshkin et al., REDISTRIBUTION AND INCORPORATION OF SI IN GAAS DUE TO INDIUM DOPING, Materials science & engineering. B, Solid-state materials for advanced technology, 26(1), 1994, pp. 7-11
REVERSIBLE CHANGES OF PROPERTIES OF PURE CDTE BY ANNEALING AND AGING
Authors: KVIT AV KLEVKOV YV OKTYABRSKY SR ZHURKIN BG
Citation: Av. Kvit et al., REVERSIBLE CHANGES OF PROPERTIES OF PURE CDTE BY ANNEALING AND AGING, Semiconductor science and technology, 9(10), 1994, pp. 1805-1809
Risultati: 1-10 |