Authors:
PAULSEN RE
KYONO CS
WANG Y
KLEIN KM
LIM IS
TINKLER S
BELLAMAK B
ODLE DW
ZHOU ZX
DAHL P
GIOVANETTO M
MAKWANA J
PATEL S
RENO C
LENAHAN PM
BILLMAN CA
Citation: Re. Paulsen et al., PROCESS INTEGRATION OF AN INTERLEVEL DIELECTRIC (ILDO) MODULE USING ABUILDING-IN RELIABILITY APPROACH, I.E.E.E. transactions on electron devices, 45(3), 1998, pp. 655-664
Authors:
MA J
LIANG HB
PRYOR RA
CHENG S
KANESHIRO MH
KYONO CS
PAPWORTH K
Citation: J. Ma et al., GRADED-CHANNEL MOSFET (GCMOSFET) FOR HIGH-PERFORMANCE, LOW-VOLTAGE DSP APPLICATIONS, IEEE transactions on very large scale integration (VLSI) systems, 5(4), 1997, pp. 352-359
Authors:
TADAYON B
KYONO CS
FATEMI M
TADAYON S
MITTEREDER JA
Citation: B. Tadayon et al., EXTREMELY LOW SPECIFIC CONTACT RESISTIVITIES FOR P-TYPE GASB, GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 1-3
Authors:
GAMMON D
RUDIN S
REINECKE TL
KATZER DS
KYONO CS
Citation: D. Gammon et al., PHONON BROADENING OF EXCITONS IN GAAS ALXGA1-XAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 51(23), 1995, pp. 16785-16789
Citation: My. Frankel et al., ANALYSIS OF ULTRAFAST PHOTOCARRIER TRANSPORT IN ALINAS-GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE journal of quantum electronics, 31(2), 1995, pp. 278-285
Authors:
IKOSSIANASTASIOU K
BINARI SC
KELNER G
BOOS JB
KYONO CS
MITTEREDER J
GRIFFIN GL
Citation: K. Ikossianastasiou et al., WET CHEMICAL ETCHING WITH LACTIC-ACID SOLUTIONS FOR INP-BASED SEMICONDUCTOR-DEVICES, Journal of the Electrochemical Society, 142(10), 1995, pp. 3558-3564
Citation: Cs. Kyono et al., GAIN ENHANCEMENT IN ALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER LEDGE, Journal of applied physics, 76(3), 1994, pp. 1954-1955
Authors:
GIORDANA A
GLEMBOCKI OJ
GLASER ER
GASKILL DK
KYONO CS
TWIGG ME
FATEMI M
TADAYON B
TADAYON S
Citation: A. Giordana et al., CHARACTERIZATION OF CRYSTALLINE LOW-TEMPERATURE GAAS-LAYERS ANNEALED FROM AN AMORPHOUS PHASE, Journal of electronic materials, 22(12), 1993, pp. 1391-1393
Citation: Tf. Carruthers et al., ULTRAFAST PHOTODETECTION WITH AN ALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, Applied physics letters, 63(14), 1993, pp. 1921-1923