Authors:
Kagadei, VA
Kozyrev, AV
Osipov, IV
Proskurovskii, DI
Citation: Va. Kagadei et al., Current-voltage characteristics of a reflex discharge with a hollow cathode and self-heating electrode, TECH PHYS, 46(3), 2001, pp. 292-298
Authors:
Kagadei, VA
Nefyodtsev, EV
Proskurovsky, DI
Citation: Va. Kagadei et al., Investigation of the penetration of atomic hydrogen from the gas phase into SiO2/GaAs, J VAC SCI A, 19(4), 2001, pp. 1871-1877
Authors:
Kagadei, VA
Kozyrev, AV
Proskurovsky, DI
Osipov, IV
Citation: Va. Kagadei et al., Simulation of the production of atomic hydrogen in a low-pressure-arc-discharge-based source, J VAC SCI A, 19(4), 2001, pp. 1346-1352
Citation: Va. Kagadei et Di. Proskurovsky, Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion, J VAC SCI B, 18(1), 2000, pp. 454-457
Authors:
Kagadei, VA
Lilenko, YV
Shirokova, LS
Proskurovskii, DI
Citation: Va. Kagadei et al., The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures, TECH PHYS L, 26(4), 2000, pp. 269-271
Authors:
Bozhkov, VG
Kagadei, VA
Proskurovskii, DI
Romas', LM
Citation: Vg. Bozhkov et al., A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures, TECH PHYS L, 26(10), 2000, pp. 926-928
Authors:
Kagadei, VA
Lilenko, YV
Shirokova, LS
Proskurovskii, DI
Citation: Va. Kagadei et al., Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures, TECH PHYS L, 25(7), 1999, pp. 522-523
Citation: Va. Kagadei et Di. Proskurovsky, In situ cleaning of GaAs and AlxGa1-xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge, J VAC SCI A, 17(4), 1999, pp. 1488-1493
Citation: Vg. Bozhkov et al., Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts, SEMICONDUCT, 32(11), 1998, pp. 1196-1200