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Results: 1-9 |
Results: 9
Current-voltage characteristics of a reflex discharge with a hollow cathode and self-heating electrode
Authors: Kagadei, VA Kozyrev, AV Osipov, IV Proskurovskii, DI
Citation: Va. Kagadei et al., Current-voltage characteristics of a reflex discharge with a hollow cathode and self-heating electrode, TECH PHYS, 46(3), 2001, pp. 292-298
Investigation of the penetration of atomic hydrogen from the gas phase into SiO2/GaAs
Authors: Kagadei, VA Nefyodtsev, EV Proskurovsky, DI
Citation: Va. Kagadei et al., Investigation of the penetration of atomic hydrogen from the gas phase into SiO2/GaAs, J VAC SCI A, 19(4), 2001, pp. 1871-1877
Simulation of the production of atomic hydrogen in a low-pressure-arc-discharge-based source
Authors: Kagadei, VA Kozyrev, AV Proskurovsky, DI Osipov, IV
Citation: Va. Kagadei et al., Simulation of the production of atomic hydrogen in a low-pressure-arc-discharge-based source, J VAC SCI A, 19(4), 2001, pp. 1346-1352
Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion
Authors: Kagadei, VA Proskurovsky, DI
Citation: Va. Kagadei et Di. Proskurovsky, Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion, J VAC SCI B, 18(1), 2000, pp. 454-457
The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures
Authors: Kagadei, VA Lilenko, YV Shirokova, LS Proskurovskii, DI
Citation: Va. Kagadei et al., The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures, TECH PHYS L, 26(4), 2000, pp. 269-271
A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures
Authors: Bozhkov, VG Kagadei, VA Proskurovskii, DI Romas', LM
Citation: Vg. Bozhkov et al., A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures, TECH PHYS L, 26(10), 2000, pp. 926-928
Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures
Authors: Kagadei, VA Lilenko, YV Shirokova, LS Proskurovskii, DI
Citation: Va. Kagadei et al., Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures, TECH PHYS L, 25(7), 1999, pp. 522-523
In situ cleaning of GaAs and AlxGa1-xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge
Authors: Kagadei, VA Proskurovsky, DI
Citation: Va. Kagadei et Di. Proskurovsky, In situ cleaning of GaAs and AlxGa1-xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge, J VAC SCI A, 17(4), 1999, pp. 1488-1493
Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts
Authors: Bozhkov, VG Kagadei, VA Torkhov, NA
Citation: Vg. Bozhkov et al., Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts, SEMICONDUCT, 32(11), 1998, pp. 1196-1200
Risultati: 1-9 |