Authors:
Omichi, K
Kaiya, K
Takahashi, N
Nakamura, T
Okamoto, S
Yamamoto, H
Citation: K. Omichi et al., Growth of ZnO thin films exhibiting room-temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy, J MAT CHEM, 11(2), 2001, pp. 262-263
Authors:
Kaiya, K
Omichi, K
Takahashi, N
Nakamura, T
Okamoto, S
Yamamoto, H
Citation: K. Kaiya et al., Growth of a high quality ZnO film on sapphire by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers, J MAT CHEM, 10(4), 2000, pp. 969-972
Authors:
Kaiya, K
Yoshii, N
Takahashi, N
Nakamura, T
Citation: K. Kaiya et al., Atmospheric pressure atomic layer epitaxy of ZnO on a sapphire (0001) substrate by alternate reaction of ZnCl2 and O-2, J MAT SCI L, 19(23), 2000, pp. 2089-2090
Authors:
Takahashi, N
Kaiya, K
Nakamura, T
Momose, Y
Yamamoto, H
Citation: N. Takahashi et al., Growth of ZnO on sapphire (0001) by the vapor phase epitaxy using a chloride source, JPN J A P 2, 38(4B), 1999, pp. L454-L456