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Results: 1-25 | 26-37 |
Results: 26-37/37
The nature of damage in ion-implanted and annealed diamond
Authors: Kalish, R Reznik, A Nugent, KW Prawer, S
Citation: R. Kalish et al., The nature of damage in ion-implanted and annealed diamond, NUCL INST B, 148(1-4), 1999, pp. 626-633
Computer simulation of damage in diamond due to ion impact and its annealing
Authors: Saada, D Adler, J Kalish, R
Citation: D. Saada et al., Computer simulation of damage in diamond due to ion impact and its annealing, PHYS REV B, 59(10), 1999, pp. 6650-6660
The effect of grain boundaries on electrical conductivity in thin GaN layers
Authors: Salzman, J Uzan-Saguy, C Meyler, B Kalish, R
Citation: J. Salzman et al., The effect of grain boundaries on electrical conductivity in thin GaN layers, PHYS ST S-A, 176(1), 1999, pp. 683-687
Ion-implantation-induced defects in diamond and their annealing: Experiment and simulation
Authors: Kalish, R Reznik, A Prawer, S Saada, D Adler, J
Citation: R. Kalish et al., Ion-implantation-induced defects in diamond and their annealing: Experiment and simulation, PHYS ST S-A, 174(1), 1999, pp. 83-99
Cathodic and anodic deposition of mercury and silver at boron-doped diamond electrodes
Authors: Vinokur, N Miller, B Avyigal, Y Kalish, R
Citation: N. Vinokur et al., Cathodic and anodic deposition of mercury and silver at boron-doped diamond electrodes, J ELCHEM SO, 146(1), 1999, pp. 125-130
Doping of diamond
Authors: Kalish, R
Citation: R. Kalish, Doping of diamond, CARBON, 37(5), 1999, pp. 781-785
Thermal stability and relaxation in diamond-like-carbon. A Raman study of films with different sp(3) fractions (ta-C to a-C)
Authors: Kalish, R Lifshitz, Y Nugent, K Prawer, S
Citation: R. Kalish et al., Thermal stability and relaxation in diamond-like-carbon. A Raman study of films with different sp(3) fractions (ta-C to a-C), APPL PHYS L, 74(20), 1999, pp. 2936-2938
Electrical isolation of GaN by ion implantation damage: Experiment and model
Authors: Uzan-Saguy, C Salzman, J Kalish, R Richter, V Tish, U Zamir, S Prawer, S
Citation: C. Uzan-saguy et al., Electrical isolation of GaN by ion implantation damage: Experiment and model, APPL PHYS L, 74(17), 1999, pp. 2441-2443
Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP
Authors: Cohen, GM Ritter, D Richter, V Kalish, R
Citation: Gm. Cohen et al., Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP, APPL PHYS L, 74(1), 1999, pp. 43-45
Nonlinear resistance of polycrystalline boron-doped diamond films
Authors: Vinokur, N Miller, B Avyigal, Y Kalish, R
Citation: N. Vinokur et al., Nonlinear resistance of polycrystalline boron-doped diamond films, EL SOLID ST, 1(6), 1998, pp. 265-267
Effective activation of dopants using MeV ion implantation
Authors: Prawer, S Jamieson, DN Nugent, KW Walker, R Uzan-Saguy, C Kalish, R
Citation: S. Prawer et al., Effective activation of dopants using MeV ion implantation, DIAM FILM T, 8(4), 1998, pp. 195-210
Doping diamond for electronic applications
Authors: Kalish, R
Citation: R. Kalish, Doping diamond for electronic applications, ISR J CHEM, 38(1-2), 1998, pp. 41-50
Risultati: 1-25 | 26-37 |