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Results: 1-10 |
Results: 10
Carbon nanotube composites synthesized by ion-assisted pulsed laser deposition
Authors: Sharma, AK Kalyanaraman, R Narayan, RJ Oktyabrsky, S Narayan, J
Citation: Ak. Sharma et al., Carbon nanotube composites synthesized by ion-assisted pulsed laser deposition, MAT SCI E B, 79(2), 2001, pp. 123-127
Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter
Authors: Kalyanaraman, R Haynes, TE Yoon, M Larson, BC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter, NUCL INST B, 175, 2001, pp. 182-186
Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
Authors: Kalyanaraman, R Haynes, TE Holland, OW Gossmann, HJL Rafferty, CS Gilmer, GH
Citation: R. Kalyanaraman et al., Binding energy of vacancies to clusters formed in Si by high-energy ion implantation, APPL PHYS L, 79(13), 2001, pp. 1983-1985
Depth dependence of {311} defect dissolution
Authors: Venezia, VC Kalyanaraman, R Gossmann, HJL Rafferty, CS Werner, P
Citation: Vc. Venezia et al., Depth dependence of {311} defect dissolution, APPL PHYS L, 79(10), 2001, pp. 1429-1431
Growth, structure, and performance of depth-graded W/Si multilayers for hard x-ray optics
Authors: Windt, DL Christensen, FE Craig, WW Hailey, C Harrison, FA Jimenez-Garate, M Kalyanaraman, R Mao, PH
Citation: Dl. Windt et al., Growth, structure, and performance of depth-graded W/Si multilayers for hard x-ray optics, J APPL PHYS, 88(1), 2000, pp. 460-470
Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)]
Authors: Venezia, VC Brown, RA Kalyanaraman, R Haynes, TE Holland, OW Williams, JS
Citation: Vc. Venezia et al., Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)], APPL PHYS L, 77(1), 2000, pp. 151-152
Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling
Authors: Kalyanaraman, R Haynes, TE Venezia, VC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling, APPL PHYS L, 76(23), 2000, pp. 3379-3381
Dislocation structure of low-angle grain boundaries in YBa2Cu3O7-delta/MgOfilms
Authors: Oktyabrsky, S Kalyanaraman, R Jagannadham, K Narayan, J
Citation: S. Oktyabrsky et al., Dislocation structure of low-angle grain boundaries in YBa2Cu3O7-delta/MgOfilms, J MATER RES, 14(7), 1999, pp. 2764-2772
The role of Ag in the pulsed laser growth of YBCO thin films
Authors: Kalyanaraman, R Oktyabrsky, S Narayan, J
Citation: R. Kalyanaraman et al., The role of Ag in the pulsed laser growth of YBCO thin films, J APPL PHYS, 85(9), 1999, pp. 6636-6641
Synthesis and consolidation of iron nanopowders
Authors: Kalyanaraman, R Yoo, S Krupashankara, MS Sudarshan, TS Dowding, RJ
Citation: R. Kalyanaraman et al., Synthesis and consolidation of iron nanopowders, NANOSTR MAT, 10(8), 1998, pp. 1379-1392
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