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Results:
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Results: 25
Authors:
Wohl, G
Kasper, E
Hackbarth, T
Kibbel, H
Klose, M
Ernst, F
Citation: G. Wohl et al., Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates forhetero-CMOS transistors, J MAT S-M E, 12(4-6), 2001, pp. 235-240
Authors:
Eberhardt, J
Kasper, E
Citation: J. Eberhardt et E. Kasper, Ni/Ag metallization for SiGeHBTs using a Ni silicide contact, SEMIC SCI T, 16(9), 2001, pp. L47-L49
Authors:
Eberhardt, J
Kasper, E
Citation: J. Eberhardt et E. Kasper, Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times, SOL ST ELEC, 45(12), 2001, pp. 2097-2100
Authors:
Ni, WX
Lyutovich, K
Alami, J
Tengstedt, C
Bauer, M
Kasper, E
Citation: Wx. Ni et al., X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (<= 100 nm) using a low temperature growth step, J CRYST GR, 227, 2001, pp. 756-760
Authors:
Chance, JJ
Segal, JB
Wallerson, G
Kasper, E
Hruban, RH
Kickler, TS
Chan, DW
Citation: Jj. Chance et al., Cardiac troponin T and C-reactive protein as markers of acute cardiac allograft rejection, CLIN CHIM A, 312(1-2), 2001, pp. 31-39
Authors:
Kasper, E
Steinbock, O
Muller, SC
Citation: E. Kasper et al., Pattern formation in the polyacrylamide-methylene bluesulfide-oxygen system, MACRO SYMP, 160, 2000, pp. 143-149
Authors:
Spillmann, L
Laskowski, W
Lange, KW
Kasper, E
Schmidt, D
Citation: L. Spillmann et al., Stroke-blind for colors, faces and locations: Partial recovery after threeyears, REST NEUROL, 17(2-3), 2000, pp. 89-103
Authors:
Lyutovich, K
Kasper, E
Ernst, F
Bauer, M
Oehme, M
Citation: K. Lyutovich et al., Relaxed SiGe buffer layer growth with point defect injection, MAT SCI E B, 71, 2000, pp. 14-19
Authors:
Kasper, E
Citation: E. Kasper, An advanced boundary element method for the calculation of magnetic lenses, NUCL INST A, 450(1), 2000, pp. 173-178
Authors:
Zohm, H
Kasper, E
Mehringer, P
Muller, GA
Citation: H. Zohm et al., Thermal processing of silicon wafers with microwave co-heating, MICROEL ENG, 54(3-4), 2000, pp. 247-253
Authors:
Kasper, E
Wang, K
Hasegawa, H
Citation: E. Kasper et al., Papers presented at the 2000 E-MRS Spring Conference, Symposium F: Thin films epitaxial growth and nanostructures - Strasbourg, France, 29 May-2 June2000 - Preface, THIN SOL FI, 380(1-2), 2000, pp. 1-1
Authors:
Teichert, C
Hofer, C
Lyutovich, K
Bauer, M
Kasper, E
Citation: C. Teichert et al., Interplay of dislocation network and island arrangement in SiGe films grown on Si(001), THIN SOL FI, 380(1-2), 2000, pp. 25-28
Authors:
Oehme, M
Bauer, M
Parry, CP
Eifler, G
Kasper, E
Citation: M. Oehme et al., Carbon segregation in silicon, THIN SOL FI, 380(1-2), 2000, pp. 75-77
Authors:
Oehme, M
Bauer, M
Grasby, T
Kasper, E
Citation: M. Oehme et al., A novel measurement method of segregating adlayers in MBE, THIN SOL FI, 369(1-2), 2000, pp. 138-142
Authors:
Bauer, M
Lyutovich, K
Oehme, M
Kasper, E
Herzog, HJ
Ernst, F
Citation: M. Bauer et al., Relaxed SiGe buffers with thicknesses below 0.1 mu m, THIN SOL FI, 369(1-2), 2000, pp. 152-156
Authors:
Bauer, M
Oehme, M
Sauter, M
Eifler, G
Kasper, E
Citation: M. Bauer et al., Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth, THIN SOL FI, 364(1-2), 2000, pp. 228-232
Authors:
Kasper, E
Oehme, M
Citation: E. Kasper et M. Oehme, Surface segregation determination by epitaxy temperature steps, APPL PHYS L, 76(24), 2000, pp. 3573-3575
Authors:
Jarus-Dziedzic, I
Zub, W
Wronski, J
Juniewicz, H
Kasper, E
Citation: I. Jarus-dziedzic et al., The relationship between cerebral blood flow velocities and the amount of blood clots in computed tomography after subarachnoid haemorrhage, ACT NEUROCH, 142(3), 2000, pp. 309-318
Authors:
Steinbock, O
Kasper, E
Muller, SC
Citation: O. Steinbock et al., Complex pattern formation in the polyacrylamide-methylene blue-oxygen reaction, J PHYS CH A, 103(18), 1999, pp. 3442-3446
Authors:
Duschl, R
Schmidt, OG
Reitemann, G
Kasper, E
Eberl, K
Citation: R. Duschl et al., High room temperature peak-to-valley current ratio in Si based Esaki diodes, ELECTR LETT, 35(13), 1999, pp. 1111-1112
Authors:
Bauer, M
Oehme, M
Lyutovich, K
Kasper, E
Citation: M. Bauer et al., Ion assisted MBE growth of SiGe nanostructures, THIN SOL FI, 336(1-2), 1998, pp. 104-108
Authors:
Schollhorn, C
Oehme, M
Bauer, M
Kasper, E
Citation: C. Schollhorn et al., Coalescence of germanium islands on silicon, THIN SOL FI, 336(1-2), 1998, pp. 109-111
Authors:
Kasper, E
Lyutovich, K
Bauer, M
Oehme, M
Citation: E. Kasper et al., New virtual substrate concept for vertical MOS transistors, THIN SOL FI, 336(1-2), 1998, pp. 319-322
Authors:
Reitemann, G
Kasper, E
Kibbel, H
Jorke, H
Citation: G. Reitemann et al., Tunnelling currents in very narrow p(+)-n(+) junctions, THIN SOL FI, 336(1-2), 1998, pp. 344-346
Authors:
Kasper, E
Wang, KL
Hasegawa, H
Citation: E. Kasper et al., Papers presented at the 1998 E-MRS spring conference, symposium D: Thin Films Epitaxial Growth and Nanostructures Strasbourg, France, June 16-19, 1998 - Preface, THIN SOL FI, 336(1-2), 1998, pp. IX-IX
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