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Results: 1-9 |
Results: 9
Development of pulsed MeV positron beam line
Authors: Maekawa, M Kondo, M Okada, S Kawasuso, A Itoh, H
Citation: M. Maekawa et al., Development of pulsed MeV positron beam line, RADIAT PH C, 60(4-5), 2001, pp. 525-528
Positron annihilation due to silicon vacancies in 3C and 6H SiC epitaxial layers induced by 1 MeV electron irradiation
Authors: Kawasuso, A Redmann, F Krause-Rehberg, R Yoshikawa, M Kojima, K Itoh, H
Citation: A. Kawasuso et al., Positron annihilation due to silicon vacancies in 3C and 6H SiC epitaxial layers induced by 1 MeV electron irradiation, PHYS ST S-B, 223(2), 2001, pp. R8-R10
Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy
Authors: Kawasuso, A Redmann, F Krause-Rehberg, R Frank, T Weidner, M Pensl, G Sperr, P Itoh, H
Citation: A. Kawasuso et al., Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy, J APPL PHYS, 90(7), 2001, pp. 3377-3382
Defects in 30 keV Er+-implanted SiO2/Si studied by positron annihilation and cathodoluminescence
Authors: Hirata, K Arai, H Kawasuso, A Sekiguchi, T Kobayashi, Y Okada, S
Citation: K. Hirata et al., Defects in 30 keV Er+-implanted SiO2/Si studied by positron annihilation and cathodoluminescence, J APPL PHYS, 90(1), 2001, pp. 237-242
Annealing behavior of vacancies and Z(1/2) levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy
Authors: Kawasuso, A Redmann, F Krause-Rehberg, R Weidner, M Frank, T Pensl, G Sperr, P Triftshauser, W Itoh, H
Citation: A. Kawasuso et al., Annealing behavior of vacancies and Z(1/2) levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy, APPL PHYS L, 79(24), 2001, pp. 3950-3952
Rocking curves of reflection high-energy positron diffraction from hydrogen-terminated Si(111) surfaces
Authors: Kawasuso, A Yoshikawa, M Kojima, K Okada, S Ishimiya, A
Citation: A. Kawasuso et al., Rocking curves of reflection high-energy positron diffraction from hydrogen-terminated Si(111) surfaces, PHYS REV B, 61(3), 2000, pp. 2102-2106
Effect of radiation damage on luminescence of erbium-implanted SiO2/Si studied by slow positron beam
Authors: Kawasuso, A Arai, H Hirata, K Sekiguchi, T Kobayashi, Y Okada, S
Citation: A. Kawasuso et al., Effect of radiation damage on luminescence of erbium-implanted SiO2/Si studied by slow positron beam, RADIAT PH C, 58(5-6), 2000, pp. 615-619
Development and application of reflection high-energy positron diffraction
Authors: Kawasuso, A Okada, S Ichimiya, A
Citation: A. Kawasuso et al., Development and application of reflection high-energy positron diffraction, NUCL INST B, 171(1-2), 2000, pp. 219-230
Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy
Authors: Kawasuso, A Kojima, K Yoshikawa, M Itoh, H Narumi, K
Citation: A. Kawasuso et al., Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy, APPL PHYS L, 76(9), 2000, pp. 1119-1121
Risultati: 1-9 |