Authors:
Kehias, L
Jenkins, T
Quach, T
Watson, P
Welch, R
Worley, R
Oki, AK
Yen, HC
Gutierrez-Aitken, A
Okamura, W
Kaneshiro, E
Citation: L. Kehias et al., Highest efficiency, linear X-band performance using InP DHBTs-48% PAE at 30 dB C/IM3, IEEE MICR W, 11(9), 2001, pp. 361-363
Authors:
Parikh, P
Ibbetson, J
Mishra, U
Docter, D
Le, M
Kiziloglu, K
Grider, D
Pusl, J
Widman, D
Kehias, L
Jenkins, T
Citation: P. Parikh et al., Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications, IEEE MICR T, 46(12), 1998, pp. 2202-2207