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Results:
1-15
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Results: 15
Authors:
Wierer, JJ
Steigerwald, DA
Krames, MR
O'Shea, JJ
Ludowise, MJ
Christenson, G
Shen, YC
Lowery, C
Martin, PS
Subramanya, S
Gotz, W
Gardner, NF
Kern, RS
Stockman, SA
Citation: Jj. Wierer et al., High-power AlGaInN flip-chip light-emitting diodes, APPL PHYS L, 78(22), 2001, pp. 3379-3381
Neurocognitive deficits and functional outcome in schizophrenia: Are we measuring the "right stuff"?
Authors:
Green, MF
Kern, RS
Braff, DL
Mintz, J
Citation: Mf. Green et al., Neurocognitive deficits and functional outcome in schizophrenia: Are we measuring the "right stuff"?, SCHIZO BULL, 26(1), 2000, pp. 119-136
Authors:
Kwak, JS
Mohney, SE
Lin, JY
Kern, RS
Citation: Js. Kwak et al., Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphologyand thermal stability, SEMIC SCI T, 15(7), 2000, pp. 756-760
Authors:
Wolter, SD
DeLucca, JM
Mohney, SE
Kern, RS
Kuo, CP
Citation: Sd. Wolter et al., An investigation into the early stages of oxide growth on gallium nitride, THIN SOL FI, 371(1-2), 2000, pp. 153-160
Authors:
Song, YK
Zhou, H
Diagne, M
Nurmikko, AV
Schneider, RP
Kuo, CP
Krames, MR
Kern, RS
Carter-Coman, C
Kish, FA
Citation: Yk. Song et al., Optically pumped quasi-continuous wave violet vertical cavity surface emitting lasers, PHYS ST S-A, 180(1), 2000, pp. 387-389
Authors:
Romano, LT
Van de Walle, CG
Ager, JW
Gotz, W
Kern, RS
Citation: Lt. Romano et al., Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition, J APPL PHYS, 87(11), 2000, pp. 7745-7752
Authors:
Song, YK
Zhou, H
Diagne, M
Nurmikko, AV
Schneider, RP
Kuo, CP
Krames, MR
Kern, RS
Carter-Coman, C
Kish, FA
Citation: Yk. Song et al., A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser, APPL PHYS L, 76(13), 2000, pp. 1662-1664
Authors:
Wolter, SD
Luther, BP
Mohney, SE
Karlicek, RF
Kern, RS
Citation: Sd. Wolter et al., Thermally stable ZrN/Zr/n-GaN ohmic contacts, EL SOLID ST, 2(3), 1999, pp. 151-153
Authors:
Gotz, W
Kern, RS
Chen, CH
Liu, H
Steigerwald, DA
Fletcher, RM
Citation: W. Gotz et al., Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes, MAT SCI E B, 59(1-3), 1999, pp. 211-217
Authors:
Romano, LT
Van de Walle, CG
Krusor, BS
Lau, R
Ho, J
Schmidt, T
Ager, JW
Gotz, W
Kern, RS
Citation: Lt. Romano et al., Effect of Si doping on the strain and defect structure of GaN thin films, PHYSICA B, 274, 1999, pp. 50-53
Authors:
Kern, RS
Green, MF
Marshall, BD
Wirshing, WC
Wirshing, D
McGurk, SR
Marder, SR
Mintz, J
Citation: Rs. Kern et al., Risperidone versus haloperidol on secondary memory: Can newer medications aid learning?, SCHIZO BULL, 25(2), 1999, pp. 223-232
Authors:
King, SW
Kern, RS
Benjamin, MC
Barnak, JP
Nemanich, RJ
Davis, RF
Citation: Sw. King et al., Chemical vapor cleaning of 6H-SiC surfaces, J ELCHEM SO, 146(9), 1999, pp. 3448-3454
Authors:
Chen, Y
Schneider, R
Wang, SY
Kern, RS
Chen, CH
Kuo, CP
Citation: Y. Chen et al., Dislocation reduction in GaN thin films via lateral overgrowth from trenches, APPL PHYS L, 75(14), 1999, pp. 2062-2063
Authors:
Song, YK
Diagne, M
Zhou, H
Nurmikko, AV
Carter-Coman, C
Kern, RS
Kish, FA
Krames, MR
Citation: Yk. Song et al., A vertical injection blue light emitting diode in substrate separated InGaN heterostructures, APPL PHYS L, 74(24), 1999, pp. 3720-3722
Authors:
Song, YK
Zhou, H
Diagne, M
Ozden, I
Vertikov, A
Nurmikko, AV
Carter-Coman, C
Kern, RS
Kish, FA
Krames, MR
Citation: Yk. Song et al., A vertical cavity light emitting InGaN quantum well heterostructure, APPL PHYS L, 74(23), 1999, pp. 3441-3443
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