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Results:
1-10
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Results: 10
Authors:
Khanh, NQ
Citation: Nq. Khanh, The effect of the image charges on the mobility of a quasi-two-dimensionalelectron gas, PHYS ST S-B, 225(1), 2001, pp. 89-93
Authors:
Manuaba, A
Paszti, F
Ortega, C
Grosman, A
Horvath, ZE
Szilagyi, E
Khanh, NQ
Vickridge, I
Citation: A. Manuaba et al., Effect of MeV energy He and N pre-implantation on the formation of porous silicon, NUCL INST B, 179(1), 2001, pp. 63-70
Authors:
El-Adawi, H
Khanh, NQ
Gassen, H
Citation: H. El-adawi et al., Overexpression of protein disulfide isomerase in Aspergillus, CURR MICROB, 41(4), 2000, pp. 295-299
Authors:
Khanh, NQ
Zolnai, Z
Lohner, T
Toth, L
Dobos, L
Gyulai, J
Citation: Nq. Khanh et al., He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement, NUCL INST B, 161, 2000, pp. 424-428
Lattice site determination of Co in low doped congruent LiNbO3 single crystal using PIXE/channelling
Authors:
Szilagyi, E
Becze-Deak, T
Bottyan, L
Kocsonya, A
Kotai, E
Nagy, DL
Kling, A
Battistig, G
Khanh, NQ
Polgar, K
Citation: E. Szilagyi et al., Lattice site determination of Co in low doped congruent LiNbO3 single crystal using PIXE/channelling, SOL ST COMM, 115(10), 2000, pp. 535-538
Authors:
Petrik, P
Lohner, T
Fried, M
Biro, LP
Khanh, NQ
Gyulai, J
Lehnert, W
Schneider, C
Ryssel, H
Citation: P. Petrik et al., Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition, J APPL PHYS, 87(4), 2000, pp. 1734-1742
Authors:
Pinter, I
Abdulhadi, AH
Makaro, Z
Khanh, NQ
Adam, M
Barsony, I
Poortmans, J
Sivoththaman, S
Song, HZ
Adriaenssens, GJ
Citation: I. Pinter et al., Plasma immersion ion implantation for shallow junctions in silicon, APPL SURF S, 139, 1999, pp. 224-227
Authors:
Petrik, P
Lohner, T
Fried, M
Khanh, NQ
Polgar, O
Gyulai, J
Citation: P. Petrik et al., Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry, NUCL INST B, 147(1-4), 1999, pp. 84-89
Authors:
Lohner, T
Fried, M
Khanh, NQ
Petrik, P
Wormeester, H
El-Sherbiny, MA
Citation: T. Lohner et al., Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry, NUCL INST B, 147(1-4), 1999, pp. 90-95
Authors:
Khanh, NQ
Kovacsics, C
Mohacsy, T
Adam, M
Gyulai, J
Citation: Nq. Khanh et al., Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon, NUCL INST B, 147(1-4), 1999, pp. 111-115
Risultati:
1-10
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