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Results:
1-10
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Results: 10
Authors:
Craford, MG
Holonyak, N
Kish, FA
Citation: Mg. Craford et al., In pursuit of the ultimate lamp, SCI AM, 284(2), 2001, pp. 62-67
Authors:
Tan, IH
Vanderwater, DA
Huang, JW
Hofler, GE
Kish, FA
Chen, EI
Ostentowski, TD
Citation: Ih. Tan et al., Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers, J ELEC MAT, 29(2), 2000, pp. 188-194
Authors:
Song, YK
Zhou, H
Diagne, M
Nurmikko, AV
Schneider, RP
Kuo, CP
Krames, MR
Kern, RS
Carter-Coman, C
Kish, FA
Citation: Yk. Song et al., Optically pumped quasi-continuous wave violet vertical cavity surface emitting lasers, PHYS ST S-A, 180(1), 2000, pp. 387-389
Authors:
Song, YK
Zhou, H
Diagne, M
Nurmikko, AV
Schneider, RP
Kuo, CP
Krames, MR
Kern, RS
Carter-Coman, C
Kish, FA
Citation: Yk. Song et al., A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser, APPL PHYS L, 76(13), 2000, pp. 1662-1664
Authors:
Patel, D
Pikal, JM
Menoni, CS
Thomas, KJ
Kish, FA
Hueschen, MR
Citation: D. Patel et al., Effect of indirect minima carrier population on the output characteristicsof AlGaInP light-emitting diodes, APPL PHYS L, 75(20), 1999, pp. 3201-3203
Authors:
Krames, MR
Ochiai-Holcomb, M
Hofler, GE
Carter-Coman, C
Chen, EI
Tan, IH
Grillot, P
Gardner, NF
Chui, HC
Huang, JW
Stockman, SA
Kish, FA
Craford, MG
Tan, TS
Kocot, CP
Hueschen, M
Posselt, J
Loh, B
Sasser, G
Collins, D
Citation: Mr. Krames et al., High-power truncated-inverted-pyramid (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency, APPL PHYS L, 75(16), 1999, pp. 2365-2367
Authors:
Song, YK
Diagne, M
Zhou, H
Nurmikko, AV
Carter-Coman, C
Kern, RS
Kish, FA
Krames, MR
Citation: Yk. Song et al., A vertical injection blue light emitting diode in substrate separated InGaN heterostructures, APPL PHYS L, 74(24), 1999, pp. 3720-3722
Authors:
Song, YK
Zhou, H
Diagne, M
Ozden, I
Vertikov, A
Nurmikko, AV
Carter-Coman, C
Kern, RS
Kish, FA
Krames, MR
Citation: Yk. Song et al., A vertical cavity light emitting InGaN quantum well heterostructure, APPL PHYS L, 74(23), 1999, pp. 3441-3443
Authors:
Gardner, NF
Chui, HC
Chen, EI
Krames, MR
Huang, JW
Kish, FA
Stockman, SA
Kocot, CP
Tan, TS
Moll, N
Citation: Nf. Gardner et al., 1.4x efficiency improvement in transparent-substrate (AlxGa1-x)(0.5)In0.5Plight-emitting diodes with thin (<= 2000 angstrom) active regions, APPL PHYS L, 74(15), 1999, pp. 2230-2232
Authors:
Kish, FA
Fletcher, RM
Citation: Fa. Kish et Rm. Fletcher, AlCaInP light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 149
Risultati:
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