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Results: 1-7 |
Results: 7
Enhancement of gettering efficiencies of different silicon substrates during a 0.18 mu m LTB CMOS process simulation - Stratigraphy by a novel chemical ultra-trace depth-profiling
Authors: Hoelzl, R Fabry, L Range, KJ Wahlich, R Kissinger, G
Citation: R. Hoelzl et al., Enhancement of gettering efficiencies of different silicon substrates during a 0.18 mu m LTB CMOS process simulation - Stratigraphy by a novel chemical ultra-trace depth-profiling, MICROEL ENG, 56(1-2), 2001, pp. 153-156
Denuded zone formation by conventional and rapid thermal anneals
Authors: Kissinger, G Vanhellemont, J Obermeier, G Esfandyari, J
Citation: G. Kissinger et al., Denuded zone formation by conventional and rapid thermal anneals, MAT SCI E B, 73(1-3), 2000, pp. 106-110
Life cycle of grown-in defects in silicon as observed by IR-LST
Authors: Kissinger, G Vanhellemont, J
Citation: G. Kissinger et J. Vanhellemont, Life cycle of grown-in defects in silicon as observed by IR-LST, J CRYST GR, 210(1-3), 2000, pp. 7-14
Assessment of silicon wafer material for the fabrication of integrated circuit sensors
Authors: Muller, T Kissinger, G Benkitsch, AC Brand, O Baltes, H
Citation: T. Muller et al., Assessment of silicon wafer material for the fabrication of integrated circuit sensors, J ELCHEM SO, 147(4), 2000, pp. 1604-1611
Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon
Authors: Lambert, U Huber, A Grabmeier, J Obermeier, G Vanhellemont, J Wahlich, R Kissinger, G
Citation: U. Lambert et al., Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon, MICROEL ENG, 48(1-4), 1999, pp. 127-130
Uniform precipitation of oxygen in large diameter wafers
Authors: Kissinger, G Vanhellemont, J Lambert, U Graf, D Richter, H
Citation: G. Kissinger et al., Uniform precipitation of oxygen in large diameter wafers, MICROEL ENG, 45(2-3), 1999, pp. 155-160
Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing
Authors: Kissinger, G Grabolla, T Morgenstern, G Richter, H Graf, D Vanhellemont, J Lambert, U von Ammon, W
Citation: G. Kissinger et al., Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing, J ELCHEM SO, 146(5), 1999, pp. 1971-1976
Risultati: 1-7 |