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Results: 1-12 |
Results: 12
Aptamers that bind to the antibiotic moenomycin A
Authors: Schurer, H Stembera, K Knoll, D Mayer, G Blind, M Forster, HH Famulok, M Welzel, P Hahn, U
Citation: H. Schurer et al., Aptamers that bind to the antibiotic moenomycin A, BIO MED CH, 9(10), 2001, pp. 2557-2563
Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application
Authors: Osten, HJ Knoll, D Rucker, H
Citation: Hj. Osten et al., Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application, MAT SCI E B, 87(3), 2001, pp. 262-270
A 5.8 GHz Si/SiGe VCO with amplitude control for wireless LAN applications
Authors: Grau, G Langmann, U Winkler, W Knoll, D Pressel, K
Citation: G. Grau et al., A 5.8 GHz Si/SiGe VCO with amplitude control for wireless LAN applications, IEICE TR EL, E84C(10), 2001, pp. 1437-1441
Application of the Newton-Krylov method to geophysical flows
Authors: Reisner, J Mousseau, V Knoll, D
Citation: J. Reisner et al., Application of the Newton-Krylov method to geophysical flows, M WEATH REV, 129(9), 2001, pp. 2404-2415
Plant-microbe interactions: Wetting of ivy (Hedera helix L.) leaf surfacesin relation to colonization by epiphytic microorganisms
Authors: Knoll, D Schreiber, L
Citation: D. Knoll et L. Schreiber, Plant-microbe interactions: Wetting of ivy (Hedera helix L.) leaf surfacesin relation to colonization by epiphytic microorganisms, MICROB ECOL, 40(1), 2000, pp. 33-42
Atomic layer doping of SiGe - fundamentals and device applications
Authors: Tillack, B Heinemann, B Knoll, D
Citation: B. Tillack et al., Atomic layer doping of SiGe - fundamentals and device applications, THIN SOL FI, 369(1-2), 2000, pp. 189-194
Comparison of SiGe and SiGe : C heterojunction bipolar transistors
Authors: Knoll, D Heinemann, B Ehwald, KE Tillack, B Schley, P Osten, HJ
Citation: D. Knoll et al., Comparison of SiGe and SiGe : C heterojunction bipolar transistors, THIN SOL FI, 369(1-2), 2000, pp. 342-346
Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers
Authors: Heinemann, B Knoll, D Fischer, GG Schley, P Osten, HJ
Citation: B. Heinemann et al., Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers, THIN SOL FI, 369(1-2), 2000, pp. 347-351
A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT technology for 5-GHz wireless LAN applications
Authors: Grau, G Langmann, U Winkler, W Knoll, D Osten, J Pressel, K
Citation: G. Grau et al., A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT technology for 5-GHz wireless LAN applications, IEEE J SOLI, 35(9), 2000, pp. 1345-1352
Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
Authors: Anteney, IM Lippert, G Ashburn, P Osten, HJ Heinemann, B Parker, GJ Knoll, D
Citation: Im. Anteney et al., Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's, IEEE ELEC D, 20(3), 1999, pp. 116-118
The Concept of the self and the absurd
Authors: Knoll, D
Citation: D. Knoll, The Concept of the self and the absurd, ANALYT PSYC, 30(3), 1999, pp. 190-214
Increasing process margin in SiGe heterojunction bipolar technology by adding carbon
Authors: Osten, HJ Knoll, D Heinemann, B Schley, P
Citation: Hj. Osten et al., Increasing process margin in SiGe heterojunction bipolar technology by adding carbon, IEEE DEVICE, 46(9), 1999, pp. 1910-1912
Risultati: 1-12 |