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Authors: da Silva, DL Fichtner, PFP Peeva, A Behar, M Koegler, R Skorupa, W

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Authors: Peeva, A Koegler, R Brauer, G Werner, P Skorupa, W

Citation: A. Peeva et al., Metallic impurity gettering to defects remaining in the R-P/2 region of MeV-ion implanted and annealed silicon, MAT SC S PR, 3(4), 2000, pp. 297-301

Authors: Fichtner, PFP Peeva, A Behar, M Azevedo, GD Maltez, RL Koegler, R Skorupa, W

Citation: Pfp. Fichtner et al., He-induced cavity formation in silicon upon high-temperature implantation, NUCL INST B, 161, 2000, pp. 1038-1042

Authors: Fichtner, PFP Behar, M Kaschny, JR Peeva, A Koegler, R Skorupa, W

Citation: Pfp. Fichtner et al., Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon, APPL PHYS L, 77(7), 2000, pp. 972-974