Authors: Brudnyi, VN Kolin, NG Merkurisov, DI Novikov, VA

Citation: Vn. Brudnyi et al., Changes in the optical-absorption spectra of transmutation-doped GaAs as aresult of annealing, SEMICONDUCT, 35(6), 2001, pp. 708-713

Authors: Kolin, NG Merkurisov, DI Solov'ev, SP

Citation: Ng. Kolin et al., Electrical properties of InP irradiated with fast neutrons in a nuclear reactor, SEMICONDUCT, 34(2), 2000, pp. 146-149

Authors: Kolin, NG Merkurisov, DI Solov'ev, SP

Citation: Ng. Kolin et al., Electrical properties of transmutation-doped indium phosphide, SEMICONDUCT, 34(2), 2000, pp. 150-154

Authors: Brudnyi, VN Bublik, VT Goshitskii, BN Emtsev, VV Kazanskii, YA Konopleva, RF Konobeev, YV Kolin, NG Kuz'min, II Mil'vidskii, MG Ozerov, RP Osvenskii, VB Plotnikov, VG Simonov, AP Smirnov, LS Kharchenko, VA

Citation: Vn. Brudnyi et al., Sergei Petrovich Solov'ev (1932-2000), SEMICONDUCT, 34(12), 2000, pp. 1410-1411

Authors: Kolin, NG Merkurisov, DI Solov'ev, SP

Citation: Ng. Kolin et al., Electrical properties of InSb irradiated with fast neutrons from a nuclearreactor, SEMICONDUCT, 33(8), 1999, pp. 847-849

Authors: Kolin, NG Merkurisov, DI Solov'ev, SP

Citation: Ng. Kolin et al., Electrical properties of nuclear-doped indium antimonide, SEMICONDUCT, 33(7), 1999, pp. 712-715