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Results: 1-18 |
Results: 18
Growth and device applications of III-nitrides by MBE
Authors: Moustakas, TD Iliopoulos, E Sampath, AV Ng, HM Doppalapudi, D Misra, M Korakakis, D Singh, R
Citation: Td. Moustakas et al., Growth and device applications of III-nitrides by MBE, J CRYST GR, 227, 2001, pp. 13-20
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M Grandjean, N Massies, J
Citation: A. Bell et al., Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN, J APPL PHYS, 89(2), 2001, pp. 1070-1074
A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy.
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M
Citation: A. Bell et al., A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy., MRS I J N S, 5, 2000, pp. NIL_655-NIL_660
An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy
Authors: Bell, A Harrison, I Cheng, TS Korakakis, D Foxon, CT Novikov, S Ber, BY Kudriavtsev, YA
Citation: A. Bell et al., An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy, SEMIC SCI T, 15(8), 2000, pp. 789-793
Photoenhanced wet chemical etching of MBE grown gallium nitride
Authors: Stanton, NM Kent, AJ Hawker, P Cheng, TS Foxon, CT Korakakis, D Campion, RP Staddon, CR Middleton, JR
Citation: Nm. Stanton et al., Photoenhanced wet chemical etching of MBE grown gallium nitride, MAT SCI E B, 68(1), 1999, pp. 52-55
Annealing of gallium nitride under high-N-2 pressure
Authors: Porowski, S Jun, J Krukowski, S Grzegory, I Leszczynski, M Suski, T Teisseyre, H Foxon, CT Korakakis, D
Citation: S. Porowski et al., Annealing of gallium nitride under high-N-2 pressure, PHYSICA B, 265(1-4), 1999, pp. 295-299
Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides
Authors: Katsikini, M Fieber-Erdmann, M Holub-Krappe, E Korakakis, D Moustakas, TD Paloura, EC
Citation: M. Katsikini et al., Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides, J SYNCHROTR, 6, 1999, pp. 558-560
Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides
Authors: Katsikini, M Paloura, EC Fieber-Erdmam, M Holub-Krappe, E Korakakis, D Moustakas, TD
Citation: M. Katsikini et al., Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides, J ELEC SPEC, 103, 1999, pp. 695-699
Relaxation processes of AlGaN/GaN heterostructures grown onto single crystal GaN(0001) substrates
Authors: Christiansen, SH Albrecht, M Strunk, HP Foxon, CT Korakakis, D Grzegory, I Porowski, S
Citation: Sh. Christiansen et al., Relaxation processes of AlGaN/GaN heterostructures grown onto single crystal GaN(0001) substrates, PHYS ST S-A, 176(1), 1999, pp. 285-290
Nano-fabrication of GaN pillars using focused ion beam etching
Authors: Kuball, M Morrissey, FH Benyoucef, M Harrison, I Korakakis, D Foxon, CT
Citation: M. Kuball et al., Nano-fabrication of GaN pillars using focused ion beam etching, PHYS ST S-A, 176(1), 1999, pp. 355-358
Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD
Authors: Harris, JJ Lee, KJ Harrison, I Flannery, LB Korakakis, D Cheng, TS Foxon, CT Bougrioua, Z Moerman, I Van der Stricht, W Thrush, EJ Hamilton, B Ferhah, K
Citation: Jj. Harris et al., Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD, PHYS ST S-A, 176(1), 1999, pp. 363-367
RHEED studies of group III-nitrides grown by MBE
Authors: Foxon, CT Davis, CS Novikov, SV Hughes, OH Cheng, TS Korakakis, D Jeffs, NJ Grzegory, I Porowski, S
Citation: Ct. Foxon et al., RHEED studies of group III-nitrides grown by MBE, PHYS ST S-A, 176(1), 1999, pp. 723-726
The influence of the annealing ambient on strain and doping in GaN during high-temperature processing
Authors: Kuball, M Hayes, JM Bell, A Harrison, I Korakakis, D Foxon, CT
Citation: M. Kuball et al., The influence of the annealing ambient on strain and doping in GaN during high-temperature processing, PHYS ST S-A, 176(1), 1999, pp. 759-762
Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals
Authors: Foxon, CT Cheng, TS Novikov, SV Korakakis, D Jeffs, NJ Grzegory, I Porowski, S
Citation: Ct. Foxon et al., Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals, J CRYST GR, 207(1-2), 1999, pp. 1-7
RHEED studies of the GaN surface during growth by molecular beam epitaxy
Authors: Hughes, OH Cheng, TS Novikov, SV Foxon, CT Korakakis, D Jeffs, NJ
Citation: Oh. Hughes et al., RHEED studies of the GaN surface during growth by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 388-391
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates
Authors: Cheng, TS Novikov, SV Lebedev, VB Campion, RP Jeffs, NJ Melnik, YV Tsvetkov, DV Stepanov, SI Cherenkov, AE Dmitriev, VA Korakakis, D Hughes, OH Foxon, CT
Citation: Ts. Cheng et al., The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates, J CRYST GR, 197(1-2), 1999, pp. 12-18
High-temperature processing of GaN: The influence of the annealing ambienton strain in GaN
Authors: Hayes, JM Kuball, M Bell, A Harrison, I Korakakis, D Foxon, CT
Citation: Jm. Hayes et al., High-temperature processing of GaN: The influence of the annealing ambienton strain in GaN, APPL PHYS L, 75(14), 1999, pp. 2097-2099
Photoconductive detectors based on partially ordered AlxGa1-xN alloys grown by molecular beam epitaxy
Authors: Misra, M Korakakis, D Ng, HM Moustakas, TD
Citation: M. Misra et al., Photoconductive detectors based on partially ordered AlxGa1-xN alloys grown by molecular beam epitaxy, APPL PHYS L, 74(15), 1999, pp. 2203-2205
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