Authors:
Marcinkevicius, S
Jagadish, C
Tan, HH
Kaminska, M
Korona, K
Adomavicius, R
Krotkus, A
Citation: S. Marcinkevicius et al., Influence of annealing on carrier dynamics in As ion-implanted epitaxiallylifted-off GaAs layers, APPL PHYS L, 76(10), 2000, pp. 1306-1308
Authors:
Stepniewski, R
Wysmolek, A
Potemski, M
Lusakowski, J
Korona, K
Pakula, K
Baranowski, JM
Martinez, G
Wyder, P
Grzegory, I
Porowski, S
Citation: R. Stepniewski et al., Impurity-related luminescence of homoepitaxial GaN studied with high magnetic fields, PHYS ST S-B, 210(2), 1998, pp. 373-383