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Results:
1-14
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Results: 14
Authors:
Kosina, H
Nedjalkov, M
Citation: H. Kosina et M. Nedjalkov, The Monte Carlo method for semi-classical charge transport in semiconductor devices, MATH COMP S, 55(1-3), 2001, pp. 93-102
Authors:
Nedjalkov, M
Kosina, H
Citation: M. Nedjalkov et H. Kosina, Variance of the ensemble Monte Carlo algorithm for semiconductor transportmodeling, MATH COMP S, 55(1-3), 2001, pp. 191-198
Authors:
Gritsch, M
Kosina, H
Grasser, T
Selberherr, S
Citation: M. Gritsch et al., Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs, SOL ST ELEC, 45(4), 2001, pp. 621-627
Authors:
Grasser, T
Kosina, H
Gritsch, M
Selberherr, S
Citation: T. Grasser et al., Using six moments of Boltzmann's transport equation for device simulation, J APPL PHYS, 90(5), 2001, pp. 2389-2396
Authors:
Grasser, T
Kosina, H
Selberherr, S
Citation: T. Grasser et al., Influence of the distribution function shape and the band structure on impact ionization modeling, J APPL PHYS, 90(12), 2001, pp. 6165-6171
Authors:
Gamiz, F
Roldan, JB
Kosina, H
Grasser, T
Citation: F. Gamiz et al., Improving strained-Si on Si1-xGex deep submicron MOSFETs performance by means of a stepped doping profile, IEEE DEVICE, 48(9), 2001, pp. 1878-1884
Authors:
Grasser, T
Kosina, H
Selberherr, S
Citation: T. Grasser et al., Investigation of spurious velocity overshoot using Monte Carlo data, APPL PHYS L, 79(12), 2001, pp. 1900-1902
Authors:
Nedjalkov, M
Kosina, H
Selberherr, S
Citation: M. Nedjalkov et al., A Monte-Carlo method to analyze the small signal response of the semiconductor carriers, IEICE TR EL, E83C(8), 2000, pp. 1218-1223
Authors:
Kosina, H
Nedjalkov, M
Selberherr, S
Citation: H. Kosina et al., A Monte Carlo method for small signal analysis of the Boltzmann equation, J APPL PHYS, 87(9), 2000, pp. 4308-4314
Authors:
Kosina, H
Nedjalkov, M
Selberherr, S
Citation: H. Kosina et al., Theory of the Monte Carlo method for semiconductor device simulation, IEEE DEVICE, 47(10), 2000, pp. 1898-1908
Authors:
Zankel, K
Kosina, H
Citation: K. Zankel et H. Kosina, Capacitance simulation of irradiated semiconductor particle detectors, NUOV CIM A, 112(1-2), 1999, pp. 43-47
Authors:
Gonzalez, B
Palankovski, V
Kosina, H
Hernandez, A
Selberherr, S
Citation: B. Gonzalez et al., An energy relaxation time model for device simulation, SOL ST ELEC, 43(9), 1999, pp. 1791-1795
Authors:
Kaiblinger-Grujin, G
Kosina, H
Selberherr, S
Citation: G. Kaiblinger-grujin et al., Response to "Comment on 'Influence of the doping element on the electron mobility in n-silicon'" [J-Appl. Phys. 85, 7984 (1999)], J APPL PHYS, 85(11), 1999, pp. 7986-7986
Authors:
Kosina, H
Citation: H. Kosina, A method to reduce-small-angle scattering in Monte Carlo device analysis, IEEE DEVICE, 46(6), 1999, pp. 1196-1200
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