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Results: 1-19 |
Results: 19
Spontaneous Hall effect in MBE grown Fe layers on GaAs(311) and GaAs(331) substrates
Authors: Friedland, KJ Notzel, R Schonherr, HP Riedel, A Kostial, H Ploog, KH
Citation: Kj. Friedland et al., Spontaneous Hall effect in MBE grown Fe layers on GaAs(311) and GaAs(331) substrates, PHYSICA E, 10(1-3), 2001, pp. 442-446
High mobility electron heterostructure wafer fused onto LiNbO3
Authors: Friedland, KJ Riedel, A Kostial, H Horicke, M Hey, R Ploog, KH
Citation: Kj. Friedland et al., High mobility electron heterostructure wafer fused onto LiNbO3, J ELEC MAT, 30(7), 2001, pp. 817-820
Room-temperature spin injection from Fe into GaAs - art. no. 016601
Authors: Zhu, HJ Ramsteiner, M Kostial, H Wassermeier, M Schonherr, HP Ploog, KH
Citation: Hj. Zhu et al., Room-temperature spin injection from Fe into GaAs - art. no. 016601, PHYS REV L, 8701(1), 2001, pp. 6601-NIL_107
Deformations in (Al,Ga)As epitaxial layers wafer bonded on dissimilar substrates
Authors: Jenichen, B Kaganer, VM Riedel, A Kostial, H Gong, Q Hey, R Friedland, K Ploog, KH
Citation: B. Jenichen et al., Deformations in (Al,Ga)As epitaxial layers wafer bonded on dissimilar substrates, J APPL PHYS, 89(4), 2001, pp. 2173-2178
In situ controlled growth of low-temperature GaAs and its application for mode-locking devices
Authors: Herfort, J Apostolopoulos, G Friedland, KJ Kostial, H Ulrici, W Daweritz, L Leitner, M Glas, P Ploog, KH
Citation: J. Herfort et al., In situ controlled growth of low-temperature GaAs and its application for mode-locking devices, JPN J A P 1, 39(4B), 2000, pp. 2452-2456
Response of a Fermi gas in a disordered system to a phonon flux
Authors: Poplavsky, D Danilchenko, B Kostial, H
Citation: D. Poplavsky et al., Response of a Fermi gas in a disordered system to a phonon flux, PHYS REV B, 61(16), 2000, pp. 10941-10949
Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs
Authors: Krispin, P Asghar, M Knauer, A Kostial, H
Citation: P. Krispin et al., Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs, J CRYST GR, 220(3), 2000, pp. 220-225
Elimination of carrier-density nonuniformities by surface acoustic waves
Authors: Takagaki, Y Wiebicke, E Friedland, KJ Kostial, H Ploog, KH
Citation: Y. Takagaki et al., Elimination of carrier-density nonuniformities by surface acoustic waves, APPL PHYS L, 76(16), 2000, pp. 2259-2261
Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowth
Authors: Wassermeier, M Hey, R Horicke, M Wiebicke, E Kostial, H
Citation: M. Wassermeier et al., Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowth, J VAC SCI B, 17(4), 1999, pp. 1791-1794
Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy
Authors: Krispin, P Asghar, M Kostial, H Hey, R
Citation: P. Krispin et al., Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy, PHYSICA B, 274, 1999, pp. 693-696
Destruction of weak localization by phonon flux in delta-doped GaAs
Authors: Poplavsky, D Danilchenko, B Kostial, H
Citation: D. Poplavsky et al., Destruction of weak localization by phonon flux in delta-doped GaAs, PHYSICA B, 263, 1999, pp. 230-232
Wood anomalies in the infrared spectra of grating-coupler-induced surface phonon polaritons in GaAs
Authors: Giehler, M Kostial, H Grahn, HT
Citation: M. Giehler et al., Wood anomalies in the infrared spectra of grating-coupler-induced surface phonon polaritons in GaAs, PHYS ST S-B, 215(1), 1999, pp. 149-153
Self-starting mode locking of a Nd : glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs
Authors: Leitner, M Glas, P Sandrock, T Wrage, M Apostolopoulos, G Riedel, A Kostial, H Herfort, J Friedland, KJ Daweritz, L
Citation: M. Leitner et al., Self-starting mode locking of a Nd : glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs, OPTICS LETT, 24(22), 1999, pp. 1567-1569
Discontinuities and hysteresis in the I-V characteristics of n-GaAs at lowtemperatures
Authors: Klimenta, H Alshuth, M Prettl, W Kostial, H
Citation: H. Klimenta et al., Discontinuities and hysteresis in the I-V characteristics of n-GaAs at lowtemperatures, PHYS ST S-A, 176(2), 1999, pp. 1017-1024
Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs
Authors: Krispin, P Lazzari, JL Kostial, H
Citation: P. Krispin et al., Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs, J CRYST GR, 202, 1999, pp. 267-270
Minimizing interface contamination in MBE overgrowth
Authors: Hey, R Wassermeier, M Horicke, M Wiebicke, E Kostial, H
Citation: R. Hey et al., Minimizing interface contamination in MBE overgrowth, J CRYST GR, 202, 1999, pp. 582-585
Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates
Authors: Ma, WQ Notzel, R Ramsteiner, M Jahn, U Schonherr, HP Kostial, H Ploog, KH
Citation: Wq. Ma et al., Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates, APPL PHYS L, 75(13), 1999, pp. 1836-1838
Ballistic phonon transmission across wafer-bonded crystals
Authors: Msall, ME Klimashov, A Kronmuller, S Kostial, H Dietsche, W Friedland, K
Citation: Me. Msall et al., Ballistic phonon transmission across wafer-bonded crystals, APPL PHYS L, 74(6), 1999, pp. 821-823
Controllable bistabilities and bifurcations in a photoexcited GaAs AlAs superlattice
Authors: Luo, KJ Teitsworth, SW Kostial, H Grahn, HT Ohtani, N
Citation: Kj. Luo et al., Controllable bistabilities and bifurcations in a photoexcited GaAs AlAs superlattice, APPL PHYS L, 74(25), 1999, pp. 3845-3847
Risultati: 1-19 |