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Results: 1-12 |
Results: 12
The mechanism of photoluminescence quenching in porous silicon by electronirradiation of various intensity
Authors: Kostishko, BM Nagornov, YS
Citation: Bm. Kostishko et Ys. Nagornov, The mechanism of photoluminescence quenching in porous silicon by electronirradiation of various intensity, TECH PHYS L, 27(10), 2001, pp. 827-829
Water after-etching of n-type porous silicon in an electric field
Authors: Kostishko, BM Nagornov, YS
Citation: Bm. Kostishko et Ys. Nagornov, Water after-etching of n-type porous silicon in an electric field, TECH PHYS, 46(7), 2001, pp. 847-852
Heterogeneous effect in carbonized porous silicon
Authors: Kostishko, BM Atazhanov, SR Puzov, IP Solomatin, SY Nagornov, YS
Citation: Bm. Kostishko et al., Heterogeneous effect in carbonized porous silicon, TECH PHYS L, 26(3), 2000, pp. 199-201
Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon
Authors: Kostishko, BM Drozdov, AV Shibaev, PV Kostishko, AE
Citation: Bm. Kostishko et al., Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon, TECH PHYS L, 26(10), 2000, pp. 919-922
Stabilization of luminous properties of porous silicon by vacuum annealingat high temperatures
Authors: Kostishko, BM Puzov, IP Nagornov, YS
Citation: Bm. Kostishko et al., Stabilization of luminous properties of porous silicon by vacuum annealingat high temperatures, TECH PHYS L, 26(1), 2000, pp. 26-28
Role of resonant charge-exchange in photoluminescence of B-doped carbonized porous silicon
Authors: Kostishko, BM Atazhanov, SR Shibaev, PV Nagornov, YS
Citation: Bm. Kostishko et al., Role of resonant charge-exchange in photoluminescence of B-doped carbonized porous silicon, PHYS LOW-D, 7-8, 2000, pp. 47-52
Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon
Authors: Kostishko, BM Atazhanov, SR Mikov, SN Puzov, IP Kordetskii, KA
Citation: Bm. Kostishko et al., Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon, TECH PHYS L, 25(3), 1999, pp. 212-214
Effect of growth conditions on the crystal structure and composition of cubic silicon carbide layers on silicon single crystal substrates grown from solid-phase sources
Authors: Atazhanov, SR Kostishko, BM Gorelik, VS
Citation: Sr. Atazhanov et al., Effect of growth conditions on the crystal structure and composition of cubic silicon carbide layers on silicon single crystal substrates grown from solid-phase sources, CRYSTALLO R, 44(3), 1999, pp. 509-512
Activation energy of the electron-beam-stimulated quenching of photoluminescence in porous silicon
Authors: Kostishko, BM Guseva, MB Khvostov, VV Babaev, VG Nagornov, YS
Citation: Bm. Kostishko et al., Activation energy of the electron-beam-stimulated quenching of photoluminescence in porous silicon, PHYS LOW-D, 7-8, 1999, pp. 9-14
Photoluminescence and degradation properties of the carbonized porous silicon
Authors: Kostishko, BM Atazhanov, SR Mikov, SN Koltsova, LV Puzov, IP
Citation: Bm. Kostishko et al., Photoluminescence and degradation properties of the carbonized porous silicon, PHYS LOW-D, 7-8, 1999, pp. 155-161
Significance of hetero-junctions in photoluminescence of carbonized poroussilicon
Authors: Kostishko, BM Atazhanov, SR Puzov, IP Salomatin, SY Nagornov, YS
Citation: Bm. Kostishko et al., Significance of hetero-junctions in photoluminescence of carbonized poroussilicon, PHYS LOW-D, 12, 1999, pp. 1-6
Effect of electron irradiation on the electronic structure and photoluminescence behavior of porous silicon
Authors: Kostishko, BM Orlov, AM Pirogov, AV Frolov, VA
Citation: Bm. Kostishko et al., Effect of electron irradiation on the electronic structure and photoluminescence behavior of porous silicon, INORG MATER, 35(3), 1999, pp. 213-217
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