Citation: Bm. Kostishko et Ys. Nagornov, The mechanism of photoluminescence quenching in porous silicon by electronirradiation of various intensity, TECH PHYS L, 27(10), 2001, pp. 827-829
Authors:
Kostishko, BM
Drozdov, AV
Shibaev, PV
Kostishko, AE
Citation: Bm. Kostishko et al., Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon, TECH PHYS L, 26(10), 2000, pp. 919-922
Citation: Bm. Kostishko et al., Stabilization of luminous properties of porous silicon by vacuum annealingat high temperatures, TECH PHYS L, 26(1), 2000, pp. 26-28
Authors:
Kostishko, BM
Atazhanov, SR
Shibaev, PV
Nagornov, YS
Citation: Bm. Kostishko et al., Role of resonant charge-exchange in photoluminescence of B-doped carbonized porous silicon, PHYS LOW-D, 7-8, 2000, pp. 47-52
Authors:
Kostishko, BM
Atazhanov, SR
Mikov, SN
Puzov, IP
Kordetskii, KA
Citation: Bm. Kostishko et al., Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon, TECH PHYS L, 25(3), 1999, pp. 212-214
Citation: Sr. Atazhanov et al., Effect of growth conditions on the crystal structure and composition of cubic silicon carbide layers on silicon single crystal substrates grown from solid-phase sources, CRYSTALLO R, 44(3), 1999, pp. 509-512
Citation: Bm. Kostishko et al., Activation energy of the electron-beam-stimulated quenching of photoluminescence in porous silicon, PHYS LOW-D, 7-8, 1999, pp. 9-14
Authors:
Kostishko, BM
Orlov, AM
Pirogov, AV
Frolov, VA
Citation: Bm. Kostishko et al., Effect of electron irradiation on the electronic structure and photoluminescence behavior of porous silicon, INORG MATER, 35(3), 1999, pp. 213-217