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Results: 1-17 |
Results: 17
Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure
Authors: Dziuba, Z Gorska, M Antoszewski, J Babinski, A Kozodoy, P Keller, S Keller, B DenBaars, SP Mishra, UK
Citation: Z. Dziuba et al., Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure, APPL PHYS A, 72(6), 2001, pp. 691-698
High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes
Authors: Pulfrey, DL Kuek, JJ Leslie, MP Nener, BD Parish, G Mishra, UK Kozodoy, P Tarsa, EJ
Citation: Dl. Pulfrey et al., High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes, IEEE DEVICE, 48(3), 2001, pp. 486-489
GaNHBT: Toward an RF device
Authors: McCarthy, LS Smorchkova, IP Xing, HL Kozodoy, P Fini, P Limb, J Pulfrey, DL Speck, JS Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., GaNHBT: Toward an RF device, IEEE DEVICE, 48(3), 2001, pp. 543-551
Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes
Authors: Hansen, M Abare, AC Kozodoy, P Katona, TM Craven, MD Speck, JS Mishra, UK Coldren, LA DenBaars, SP
Citation: M. Hansen et al., Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes, MRS I J N S, 5, 2000, pp. NIL_17-NIL_22
Heavy doping effects in Mg-doped GaN
Authors: Kozodoy, P Xing, HL DenBaars, SP Mishra, UK Saxler, A Perrin, R Elhamri, S Mitchel, WC
Citation: P. Kozodoy et al., Heavy doping effects in Mg-doped GaN, J APPL PHYS, 87(4), 2000, pp. 1832-1835
Depletion region effects in Mg-doped GaN
Authors: Kozodoy, P DenBaars, SP Mishra, UK
Citation: P. Kozodoy et al., Depletion region effects in Mg-doped GaN, J APPL PHYS, 87(2), 2000, pp. 770-775
Solar-blind AlGaN-based inverted heterostructure photodiodes
Authors: Tarsa, EJ Kozodoy, P Ibbetson, J Keller, BP Parish, G Mishra, U
Citation: Ej. Tarsa et al., Solar-blind AlGaN-based inverted heterostructure photodiodes, APPL PHYS L, 77(3), 2000, pp. 316-318
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
Authors: Stonas, AR Kozodoy, P Marchand, H Fini, P DenBaars, SP Mishra, UK Hu, EL
Citation: Ar. Stonas et al., Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures, APPL PHYS L, 77(16), 2000, pp. 2610-2612
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Haus, E Heying, B Kozodoy, P Fini, P Ibbetson, JP Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 718-720
Optical properties of InGaN quantum wells
Authors: Chichibu, SF Abare, AC Mack, MP Minsky, MS Deguchi, T Cohen, D Kozodoy, P Fleischer, SB Keller, S Speck, JS Bowers, JE Hu, E Mishra, UK Coldren, LA DenBaars, SP Wada, K Sota, T Nakamura, S
Citation: Sf. Chichibu et al., Optical properties of InGaN quantum wells, MAT SCI E B, 59(1-3), 1999, pp. 298-306
AlGaN GaN heterojunction bipolar transistor
Authors: McCarthy, LS Kozodoy, P Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., AlGaN GaN heterojunction bipolar transistor, IEEE ELEC D, 20(6), 1999, pp. 277-279
Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes
Authors: Hansen, M Abare, AC Kozodoy, P Katona, TM Craven, MD Speck, JS Mishra, UK Coldren, LA DenBaars, SP
Citation: M. Hansen et al., Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes, PHYS ST S-A, 176(1), 1999, pp. 59-62
AlGaN/GaN HBTs using regrown emitter
Authors: Limb, JB McCarthy, L Kozodoy, P Xing, H Ibbetson, J Smorchkova, Y DenBaars, SP Mishra, UK
Citation: Jb. Limb et al., AlGaN/GaN HBTs using regrown emitter, ELECTR LETT, 35(19), 1999, pp. 1671-1673
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN
Authors: Parish, G Keller, S Kozodoy, P Ibbetson, JP Marchand, H Fini, PT Fleischer, SB DenBaars, SP Mishra, UK Tarsa, EJ
Citation: G. Parish et al., High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN, APPL PHYS L, 75(2), 1999, pp. 247-249
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
Authors: Kozodoy, P Smorchkova, YP Hansen, M Xing, HL DenBaars, SP Mishra, UK Saxler, AW Perrin, R Mitchel, WC
Citation: P. Kozodoy et al., Polarization-enhanced Mg doping of AlGaN/GaN superlattices, APPL PHYS L, 75(16), 1999, pp. 2444-2446
Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
Authors: Kozodoy, P Hansen, M DenBaars, SP Mishra, UK
Citation: P. Kozodoy et al., Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices, APPL PHYS L, 74(24), 1999, pp. 3681-3683
MOVPE growth and characterization of Mg-doped GaN
Authors: Kozodoy, P Keller, S DenBaars, S Mishra, UK
Citation: P. Kozodoy et al., MOVPE growth and characterization of Mg-doped GaN, J CRYST GR, 195(1-4), 1998, pp. 265-269
Risultati: 1-17 |