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Results:
1-9
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Results: 9
Authors:
Rogozia, M
Krispin, P
Grahn, HT
Citation: M. Rogozia et al., Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors, J APPL PHYS, 90(9), 2001, pp. 4560-4564
Authors:
Krispin, P
Spruytte, SG
Harris, JS
Ploog, KH
Citation: P. Krispin et al., Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grownby molecular beam epitaxy, J APPL PHYS, 90(5), 2001, pp. 2405-2410
Authors:
Spruytte, SG
Coldren, CW
Harris, JS
Wampler, W
Krispin, P
Ploog, K
Larson, MC
Citation: Sg. Spruytte et al., Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal, J APPL PHYS, 89(8), 2001, pp. 4401-4406
Authors:
Krispin, P
Spruytte, SG
Harris, JS
Ploog, KH
Citation: P. Krispin et al., Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy, J APPL PHYS, 89(11), 2001, pp. 6294-6301
Authors:
Krispin, P
Asghar, M
Knauer, A
Kostial, H
Citation: P. Krispin et al., Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs, J CRYST GR, 220(3), 2000, pp. 220-225
Authors:
Krispin, P
Spruytte, SG
Harris, JS
Ploog, KH
Citation: P. Krispin et al., Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements, J APPL PHYS, 88(7), 2000, pp. 4153-4158
Authors:
Krispin, P
Asghar, M
Kostial, H
Hey, R
Citation: P. Krispin et al., Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy, PHYSICA B, 274, 1999, pp. 693-696
Authors:
Krispin, P
Asghar, M
Knauer, A
Citation: P. Krispin et al., Deep electronic states near the surface of (In,Ga)P layers grown by MOVPE on GaAs, PHYSICA B, 274, 1999, pp. 815-818
Authors:
Krispin, P
Lazzari, JL
Kostial, H
Citation: P. Krispin et al., Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs, J CRYST GR, 202, 1999, pp. 267-270
Risultati:
1-9
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