Authors:
Marbach, K
Ittermann, B
Fullgrabe, M
Heemeier, M
Kroll, F
Mai, F
Meier, P
Peters, D
Thiess, H
Ackermann, H
Stockmann, HJ
Zeitz, WD
Wenisch, H
Hommel, D
Landwehr, G
Citation: K. Marbach et al., Defect properties of ion-implanted nitrogen in ZnSe - art. no. 241201, PHYS REV B, 6324(24), 2001, pp. 1201
Authors:
Ittermann, B
Fullgrabe, M
Heemeier, M
Kroll, F
Mai, F
Marbach, K
Meier, P
Peters, D
Welker, G
Geithner, W
Kappertz, S
Wilbert, S
Neugart, R
Lievens, P
Georg, U
Keim, M
Citation: B. Ittermann et al., beta-NMR in II-VI semiconductors, HYPER INTER, 129(1-4), 2000, pp. 423-441
Authors:
Ittermann, B
Fullgrabe, M
Heemeier, M
Kroll, F
Mai, F
Marbach, K
Meier, P
Peters, D
Welker, G
Geithner, W
Kappertz, S
Wilbert, S
Neugart, R
Lievens, P
Georg, U
Keim, M
Citation: B. Ittermann et al., beta-NMR in II-VI semiconductors, HYPER INTER, 129(1-4), 2000, pp. 423-441
Authors:
Ittermann, B
Fullgrabe, M
Heemeier, M
Kroll, F
Mai, F
Marbach, K
Meier, P
Peters, D
Thiess, H
Welker, G
Ackermann, H
Stockmann, HJ
Zeitz, WD
Geithner, W
Kappertz, S
Wilbert, S
Neugart, R
Lievens, P
Georg, U
Keim, M
Citation: B. Ittermann et al., Implanted light dopants in ZnSe, HYPER INTER, 121(1-8), 1999, pp. 403-407