Authors:
Maleev, NA
Krestnikov, IL
Kovsh, AR
Sakharov, AV
Zhukov, AE
Ustinov, VM
Mikhrin, SS
Passenberg, W
Pawlowski, E
Moller, C
Tsatsulnikov, AF
Kunzel, H
Ledentsov, NN
Alferov, ZI
Bimberg, D
Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806
Authors:
Nachtwei, G
Manolescu, A
Nestle, N
Kunzel, H
Citation: G. Nachtwei et al., Bistable resistance switching in a ferromagnetic quantum Hall system induced by exchange enhancement of the Zeeman energy - art. no. 045306, PHYS REV B, 6304(4), 2001, pp. 5306
Authors:
Fresser, HS
Frey, H
Prins, FE
Wharam, DA
Kern, DP
Bottcher, J
Kunzel, H
Citation: Hs. Fresser et al., Independent magnetotransport in parallel InGaAs double quantum wells with strongly different properties, SEMIC SCI T, 15(3), 2000, pp. 242-246
Authors:
Gibis, R
Kizuki, H
Albrecht, P
Harde, P
Urmann, G
Kaiser, R
Kunzel, H
Citation: R. Gibis et al., MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits, J CRYST GR, 209(2-3), 2000, pp. 463-470
Citation: K. Biermann et al., Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP, J CRYST GR, 202, 1999, pp. 36-39
Authors:
Harde, P
Gibis, R
Kaiser, R
Kizuki, H
Kunzel, H
Citation: P. Harde et al., Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS, J CRYST GR, 202, 1999, pp. 719-722