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Results:
1-8
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Results: 8
Authors:
Takagi, S
Mizuno, T
Sugiyama, N
Tezuka, T
Kurobe, A
Citation: S. Takagi et al., Strained-Si-on-insulator (strained-SOI) MOSFETs - Concept, structures and device characteristics, IEICE TR EL, E84C(8), 2001, pp. 1043-1050
Authors:
Mizuno, T
Sugiyama, N
Kurobe, A
Takagi, S
Citation: T. Mizuno et al., Advanced SOI MOSFET's with strained-Si/SiGe heterostructures, IEICE TR EL, E84C(10), 2001, pp. 1423-1430
Authors:
Mizuno, T
Sugiyama, N
Kurobe, A
Takagi, S
Citation: T. Mizuno et al., Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology, IEEE DEVICE, 48(8), 2001, pp. 1612-1618
Authors:
Mizuno, T
Takagi, S
Sugiyama, N
Satake, H
Kurobe, A
Toriumi, A
Citation: T. Mizuno et al., Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology, IEEE ELEC D, 21(5), 2000, pp. 230-232
Authors:
Sugiyama, N
Mizuno, T
Takagi, S
Koike, M
Kurobe, A
Citation: N. Sugiyama et al., Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structureusing SIMOX technology, THIN SOL FI, 369(1-2), 2000, pp. 199-202
Authors:
Hatakeyama, T
Tezuka, T
Sugiyama, N
Kurobe, A
Citation: T. Hatakeyama et al., Transport properties of two-dimensional electron gas in a strained-Si/SiGeheterostructure at low carrier densities, THIN SOL FI, 369(1-2), 2000, pp. 328-332
Authors:
Tezuka, T
Kurobe, A
Sugiyama, N
Takagi, S
Citation: T. Tezuka et al., Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs, THIN SOL FI, 369(1-2), 2000, pp. 338-341
Authors:
Tezuka, T
Hatakeyama, T
Imai, S
Sugiyama, N
Kurobe, A
Citation: T. Tezuka et al., Mobility modulation of two-dimensional hole gas in a p-type Si/SiGe modulation doped heterostructure by back-gating, SEMIC SCI T, 13(12), 1998, pp. 1477-1480
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