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Results:
1-8
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Results: 8
Authors:
Hirata, A
Maeda, T
Machida, K
Maeda, M
Yasui, K
Kyuragi, H
Citation: A. Hirata et al., Effect of thinning a WSiN/WSIx barrier layer on its barrier capability, J VAC SCI B, 19(3), 2001, pp. 788-793
Authors:
Machida, K
Shigematsu, S
Morimura, H
Tanabe, Y
Sato, N
Shimoyama, N
Kumazaki, T
Kudou, K
Yano, M
Kyuragi, H
Citation: K. Machida et al., A novel semiconductor capacitive sensor for a single-chip fingerprint sensor/identifier LSI, IEEE DEVICE, 48(10), 2001, pp. 2273-2278
Authors:
Ishii, H
Sahri, N
Nagatsuma, T
Machida, K
Saito, K
Yagi, S
Yano, M
Kudo, K
Kyuragi, H
Citation: H. Ishii et al., A new fabrication process for low-loss millimeter-wave transmission lines on silicon, JPN J A P 1, 39(4B), 2000, pp. 1982-1986
Authors:
Hirata, A
Machida, K
Kyuragi, H
Maeda, M
Citation: A. Hirata et al., A electrostatic micromechanical switch for logic operation in multichip modules on Si, SENS ACTU-A, 80(2), 2000, pp. 119-125
Authors:
Shimoyama, N
Machida, K
Shimaya, M
Akiya, H
Kyuragi, H
Citation: N. Shimoyama et al., The influence of stud bumping above the MOSFETs on device reliability, IEICE T FUN, E83A(5), 2000, pp. 851-856
Authors:
Shimoyama, N
Machida, K
Shimaya, M
Koizumi, H
Kyuragi, H
Citation: N. Shimoyama et al., The influence of stud bumping stress on device degradation in scaled MOSFETs, MICROEL REL, 40(2), 2000, pp. 267-275
Authors:
Shimoyama, N
Machida, K
Shimaya, M
Kyuragi, H
Citation: N. Shimoyama et al., Stress-induced device degradation due to die-attachment process after areabump formation, JPN J A P 1, 38(4B), 1999, pp. 2262-2265
Authors:
Hirata, A
Machida, K
Awaya, N
Kyuragi, H
Maeda, N
Citation: A. Hirata et al., Copper damascene interconnection with tungsten silicon nitride diffusion barrier formed by electron cyclotron resonance plasma nitridation, JPN J A P 1, 38(4B), 1999, pp. 2355-2359
Risultati:
1-8
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