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Results: 1-10 |
Results: 10
OPTICAL PHONON COHERENCE AND POPULATION DECAYS IN III-V SEMICONDUCTORS
Authors: DELFATTI N GANIKHANOV F LANGOT P TOMMASI R VALLEE F
Citation: N. Delfatti et al., OPTICAL PHONON COHERENCE AND POPULATION DECAYS IN III-V SEMICONDUCTORS, Journal of nonlinear optical physics and materials, 7(2), 1998, pp. 271-289
DIRECT MONITORING OF THE COUPLING-CONSTANT IN VECTORIAL LASERS
Authors: LANGOT P VALLET M BRUNEL M ROPARS G BRETENAKER F LEFLOCH A CHOQUETTE KD
Citation: P. Langot et al., DIRECT MONITORING OF THE COUPLING-CONSTANT IN VECTORIAL LASERS, Optics communications, 148(4-6), 1998, pp. 270-274
HIGH-REPETITION-RATE NONLINEAR GENERATION OF SYNCHRONIZED FREQUENCY TUNABLE FEMTOSECOND PULSES
Authors: LANGOT P DELFATTI N TOMMASI R VALLEE F
Citation: P. Langot et al., HIGH-REPETITION-RATE NONLINEAR GENERATION OF SYNCHRONIZED FREQUENCY TUNABLE FEMTOSECOND PULSES, Optics communications, 137(4-6), 1997, pp. 285-289
ULTRAFAST HOLE-PHONON INTERACTIONS IN GAAS
Authors: DELFATTI N LANGOT P TOMMASI R VALLEE F
Citation: N. Delfatti et al., ULTRAFAST HOLE-PHONON INTERACTIONS IN GAAS, Applied physics letters, 71(1), 1997, pp. 75-77
EXPERIMENTAL-EVIDENCE OF SINGLE ROUND-TRIP OSCILLATION IN POLARIZATION SELF-MODULATED VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: ROPARS G LANGOT P BRUNEL M VALLET M BRETENAKER F LEFLOCH A CHOQUETTE KD
Citation: G. Ropars et al., EXPERIMENTAL-EVIDENCE OF SINGLE ROUND-TRIP OSCILLATION IN POLARIZATION SELF-MODULATED VERTICAL-CAVITY SURFACE-EMITTING LASERS, Applied physics letters, 70(20), 1997, pp. 2661-2663
NONEQUILIBRIUM HOLE RELAXATION DYNAMICS IN AN INTRINSIC SEMICONDUCTOR
Authors: LANGOT P TOMMASI R VALLEE F
Citation: P. Langot et al., NONEQUILIBRIUM HOLE RELAXATION DYNAMICS IN AN INTRINSIC SEMICONDUCTOR, Physical review. B, Condensed matter, 54(3), 1996, pp. 1775-1784
FEMTOSECOND INVESTIGATION OF THE HOT-PHONON EFFECT IN GAAS AT ROOM-TEMPERATURE
Authors: LANGOT P DELFATTI N CHRISTOFILOS D TOMMASI R VALLEE F
Citation: P. Langot et al., FEMTOSECOND INVESTIGATION OF THE HOT-PHONON EFFECT IN GAAS AT ROOM-TEMPERATURE, Physical review. B, Condensed matter, 54(20), 1996, pp. 14487-14493
COLD-PHONON EFFECT ON ELECTRON HEATING IN GAAS
Authors: LANGOT P TOMMASI R VALLEE F
Citation: P. Langot et al., COLD-PHONON EFFECT ON ELECTRON HEATING IN GAAS, Solid state communications, 98(2), 1996, pp. 171-174
FEMTOSECOND HOLE THERMALIZATION IN BULK GAAS
Authors: TOMMASI R LANGOT P VALLEE F
Citation: R. Tommasi et al., FEMTOSECOND HOLE THERMALIZATION IN BULK GAAS, Applied physics letters, 66(11), 1995, pp. 1361-1363
ULTRAFAST RELAXATION OF FREE HOLES IN SEM ICONDUCTORS
Authors: LANGOT P DELFATTI N TOMMASI R VALLEE F
Citation: P. Langot et al., ULTRAFAST RELAXATION OF FREE HOLES IN SEM ICONDUCTORS, Annales de physique, 20(5-6), 1995, pp. 549-555
Risultati: 1-10 |