AAAAAA

   
Results: 1-13 |
Results: 13
PHOTOLUMINESCENCE AND TRANSPORT STUDIES OF BORON IN 4H SIC
Authors: SRIDHARA SG CLEMEN LL DEVATY RP CHOYKE WJ LARKIN DJ KONG HS TROFFER T PENSL G
Citation: Sg. Sridhara et al., PHOTOLUMINESCENCE AND TRANSPORT STUDIES OF BORON IN 4H SIC, Journal of applied physics, 83(12), 1998, pp. 7909-7919
AN OVERVIEW OF SIC EPITAXIAL-GROWTH
Authors: LARKIN DJ
Citation: Dj. Larkin, AN OVERVIEW OF SIC EPITAXIAL-GROWTH, MRS bulletin, 22(3), 1997, pp. 36-41
SIC DOPANT INCORPORATION CONTROL USING SITE-COMPETITION CVD
Authors: LARKIN DJ
Citation: Dj. Larkin, SIC DOPANT INCORPORATION CONTROL USING SITE-COMPETITION CVD, Physica status solidi. b, Basic research, 202(1), 1997, pp. 305-320
PROCESS-INDUCED MORPHOLOGICAL DEFECTS IN EPITAXIAL CVD SILICON-CARBIDE
Authors: POWELL JA LARKIN DJ
Citation: Ja. Powell et Dj. Larkin, PROCESS-INDUCED MORPHOLOGICAL DEFECTS IN EPITAXIAL CVD SILICON-CARBIDE, Physica status solidi. b, Basic research, 202(1), 1997, pp. 529-548
INTERNAL-STRESS AND ELASTIC-MODULUS MEASUREMENTS ON MICROMACHINED 3C-SIC THIN-FILMS
Authors: MEHREGANY M TONG LJ MATUS LG LARKIN DJ
Citation: M. Mehregany et al., INTERNAL-STRESS AND ELASTIC-MODULUS MEASUREMENTS ON MICROMACHINED 3C-SIC THIN-FILMS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 74-79
HYDROGEN INCORPORATION IN BORON-DOPED 6H-SIC CVD EPILAYERS PRODUCED USING SITE-COMPETITION EPITAXY
Authors: LARKIN DJ SRIDHARA SG DEVATY RP CHOYKE WJ
Citation: Dj. Larkin et al., HYDROGEN INCORPORATION IN BORON-DOPED 6H-SIC CVD EPILAYERS PRODUCED USING SITE-COMPETITION EPITAXY, Journal of electronic materials, 24(4), 1995, pp. 289-294
SURFACE-MORPHOLOGY OF SILICON-CARBIDE EPITAXIAL-FILMS
Authors: POWELL JA LARKIN DJ ABEL PB
Citation: Ja. Powell et al., SURFACE-MORPHOLOGY OF SILICON-CARBIDE EPITAXIAL-FILMS, Journal of electronic materials, 24(4), 1995, pp. 295-301
ELECTRICAL-PROPERTIES OF EPITAXIAL 3C-SIC AND 6H-SIC P-N-JUNCTION DIODES PRODUCED SIDE-BY-SIDE ON 6H-SIC SUBSTRATES
Authors: NEUDECK PG LARKIN DJ STARR JE POWELL JA SALUPO CS MATUS LG
Citation: Pg. Neudeck et al., ELECTRICAL-PROPERTIES OF EPITAXIAL 3C-SIC AND 6H-SIC P-N-JUNCTION DIODES PRODUCED SIDE-BY-SIDE ON 6H-SIC SUBSTRATES, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 826-835
SITE-COMPETITION EPITAXY FOR SUPERIOR SILICON-CARBIDE ELECTRONICS
Authors: LARKIN DJ NEUDECK PG POWELL JA MATUS LG
Citation: Dj. Larkin et al., SITE-COMPETITION EPITAXY FOR SUPERIOR SILICON-CARBIDE ELECTRONICS, Applied physics letters, 65(13), 1994, pp. 1659-1661
2000-V 6H-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION
Authors: NEUDECK PG LARKIN DJ POWELL JA MATUS LG SALUPO CS
Citation: Pg. Neudeck et al., 2000-V 6H-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(11), 1994, pp. 1386-1388
HIGH-VOLTAGE 6H-SIC RECTIFIERS - PROSPECTS AND PROGRESS
Authors: NEUDECK PG LARKIN DJ POWELL JA MATUS LG
Citation: Pg. Neudeck et al., HIGH-VOLTAGE 6H-SIC RECTIFIERS - PROSPECTS AND PROGRESS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2130-2130
ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC
Authors: CLEMEN LL DEVATY RP MACMILLAN MF YOGANATHAN M CHOYKE WJ LARKIN DJ POWELL JA EDMOND JA KONG HS
Citation: Ll. Clemen et al., ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC, Applied physics letters, 62(23), 1993, pp. 2953-2955
ATOMIC PROBE MICROSCOPY OF 3C SIC FILMS GROWN ON 6H SIC SUBSTRATES
Authors: STECKL AJ ROTH MD POWELL JA LARKIN DJ
Citation: Aj. Steckl et al., ATOMIC PROBE MICROSCOPY OF 3C SIC FILMS GROWN ON 6H SIC SUBSTRATES, Applied physics letters, 62(20), 1993, pp. 2545-2547
Risultati: 1-13 |