Authors:
BILLON T
BANO E
DICIOCCIO L
OUISSE T
LASSAGNE P
JAUSSAUD C
Citation: T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196
Authors:
RAYNAUD C
AUTRAN JL
BRIOT JB
BALLAND B
BILLON T
LASSAGNE P
Citation: C. Raynaud et al., ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE, Microelectronic engineering, 28(1-4), 1995, pp. 209-212
Authors:
BILLON T
OUISSE T
LASSAGNE P
JASSAUD C
PONTHENIER JL
BAUD L
BECOURT N
MORFOULI P
Citation: T. Billon et al., HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT, Electronics Letters, 30(2), 1994, pp. 170-171