Authors: CHAN DSH LEANG SE CHIM WK

Citation: Dsh. Chan et al., INVESTIGATION OF THE ROLE OF HOT HOLES AND HOT-ELECTRONS IN THE GENERATION OF INTERFACE STATES IN SUBMICROMETER MOSFETS USING A NEW CHARGE-PROFILING TECHNIQUE BASED ON CHARGE-PUMPING MEASUREMENTS, Semiconductor science and technology, 13(9), 1998, pp. 976-980

Authors: CHIM WK CHAN DSH TAO JM LOU CL LEANG SE TEOW CK

Citation: Wk. Chim et al., DISTINGUISHING THE EFFECTS OF OXIDE TRAPPED CHARGES AND INTERFACE STATES IN DDD AND LATID NMOSFETS USING PHOTON-EMISSION SPECTROSCOPY, Journal of physics. D, Applied physics, 30(17), 1997, pp. 2411-2420

Authors: CHIM WK LEANG SE CHAN DSH

Citation: Wk. Chim et al., EXTRACTION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR INTERFACE STATE AND TRAPPED CHARGE SPATIAL DISTRIBUTIONS USING A PHYSICS-BASED ALGORITHM, Journal of applied physics, 81(4), 1997, pp. 1992-2001

Authors: LEANG SE CHIM WK CHAN DSH

Citation: Se. Leang et al., A NEW GATE CURRENT MEASUREMENT TECHNIQUE FOR THE CHARACTERIZATION OF HOT-CARRIER-INDUCED DEGRADATION IN MOSFETS, Solid-state electronics, 38(10), 1995, pp. 1791-1798