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Results: 1-16 |
Results: 16
LEAKAGE CURRENT CHARACTERISTICS OF LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS FOR MEMORY DEVICE APPLICATIONS
Authors: CHEN HM TSAUR SW LEE JYM
Citation: Hm. Chen et al., LEAKAGE CURRENT CHARACTERISTICS OF LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS FOR MEMORY DEVICE APPLICATIONS, JPN J A P 1, 37(7), 1998, pp. 4056-4060
ELECTRON TRAPPING PROCESS IN FERROELECTRIC LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS
Authors: CHEN HM LEE JYM
Citation: Hm. Chen et Jym. Lee, ELECTRON TRAPPING PROCESS IN FERROELECTRIC LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS, Applied physics letters, 73(3), 1998, pp. 309-311
THE TEMPERATURE-DEPENDENCE OF THE TRANSIENT CURRENT IN FERROELECTRIC PB(ZRXTI1-X)O-3 THIN-FILMS FOR MEMORY DEVICES APPLICATIONS
Authors: CHEN HM LEE JYM
Citation: Hm. Chen et Jym. Lee, THE TEMPERATURE-DEPENDENCE OF THE TRANSIENT CURRENT IN FERROELECTRIC PB(ZRXTI1-X)O-3 THIN-FILMS FOR MEMORY DEVICES APPLICATIONS, Journal of applied physics, 82(7), 1997, pp. 3478-3481
OPTICAL CHARACTERIZATION OF REAL-SPACE HOT-ELECTRON TRANSFER IN A STRAINED GAAS IN0.2GA0.8AS/GAAS QUANTUM-WELL HETEROSTRUCTURE/
Authors: YEH YH LAI JT LEE JYM
Citation: Yh. Yeh et al., OPTICAL CHARACTERIZATION OF REAL-SPACE HOT-ELECTRON TRANSFER IN A STRAINED GAAS IN0.2GA0.8AS/GAAS QUANTUM-WELL HETEROSTRUCTURE/, Journal of applied physics, 81(8), 1997, pp. 3607-3610
AN INVESTIGATION ON THE LEAKAGE CURRENT AND TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF FERROELECTRIC LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS FOR MEMORY DEVICE APPLICATIONS (VOL 69, PG 4011, 1996)
Authors: CHEN JL CHEN HM LEE JYM
Citation: Jl. Chen et al., AN INVESTIGATION ON THE LEAKAGE CURRENT AND TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF FERROELECTRIC LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS FOR MEMORY DEVICE APPLICATIONS (VOL 69, PG 4011, 1996), Applied physics letters, 70(8), 1997, pp. 1058-1058
LOW CONTACT-RESISTANCE AND SHALLOW PD GE OHMIC CONTACTS TO N-IN0.53GA0.47AS ON INP SUBSTRATE FORMED BY RAPID THERMAL ANNEALING/
Authors: YEH YH LAI JT LEE JYM
Citation: Yh. Yeh et al., LOW CONTACT-RESISTANCE AND SHALLOW PD GE OHMIC CONTACTS TO N-IN0.53GA0.47AS ON INP SUBSTRATE FORMED BY RAPID THERMAL ANNEALING/, JPN J A P 2, 35(12A), 1996, pp. 1569-1571
AN INVESTIGATION ON THE LEAKAGE CURRENT AND TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF FERROELECTRIC LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS FOR MEMORY DEVICE APPLICATIONS
Authors: CHEN JL CHEN HM LEE JYM
Citation: Jl. Chen et al., AN INVESTIGATION ON THE LEAKAGE CURRENT AND TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF FERROELECTRIC LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS FOR MEMORY DEVICE APPLICATIONS, Applied physics letters, 69(26), 1996, pp. 4011-4013
ENHANCED ELECTRON-TRANSFER IN REAL-SPACE TRANSFER DEVICES USING STRAINED INXGA1-XAS (X=0.15, 0.25) CHANNEL LAYERS
Authors: LAI JT LEE JYM
Citation: Jt. Lai et Jym. Lee, ENHANCED ELECTRON-TRANSFER IN REAL-SPACE TRANSFER DEVICES USING STRAINED INXGA1-XAS (X=0.15, 0.25) CHANNEL LAYERS, Journal of crystal growth, 150(1-4), 1995, pp. 1379-1383
FRONT-ILLUMINATED LONG-WAVELENGTH MULTIPLE-QUANTUM-WELL INFRARED PHOTODETECTORS WITH BACKSIDE GRATINGS
Authors: DENG SY LEE JYM LAI JT CHIH YD SUN TP HONG HM
Citation: Sy. Deng et al., FRONT-ILLUMINATED LONG-WAVELENGTH MULTIPLE-QUANTUM-WELL INFRARED PHOTODETECTORS WITH BACKSIDE GRATINGS, Journal of applied physics, 78(11), 1995, pp. 6822-6825
ENHANCED REAL-SPACE ELECTRON-TRANSFER IN CHARGE INJECTION TRANSISTORSWITH SOURCE-CHANNEL HETEROJUNCTIONS FORMED BY GRADED ALXGA1-XAS LAYERAND SHALLOW PD GE OHMIC CONTACTS/
Authors: LAI JT LEE JYM
Citation: Jt. Lai et Jym. Lee, ENHANCED REAL-SPACE ELECTRON-TRANSFER IN CHARGE INJECTION TRANSISTORSWITH SOURCE-CHANNEL HETEROJUNCTIONS FORMED BY GRADED ALXGA1-XAS LAYERAND SHALLOW PD GE OHMIC CONTACTS/, Applied physics letters, 66(14), 1995, pp. 1779-1781
GROWTH-BEHAVIOR OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS USING LASER-ABLATION TECHNIQUE
Authors: HUANG CS LIN IN LEE JYM TSENG TY
Citation: Cs. Huang et al., GROWTH-BEHAVIOR OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS USING LASER-ABLATION TECHNIQUE, JPN J A P 1, 33(7A), 1994, pp. 4058-4065
REDISTRIBUTION OF CONSTITUENT ELEMENTS IN PD GE CONTACTS TO N-TYPE GAAS USING RAPID THERMAL ANNEALING/
Authors: LAI JT LEE JYM
Citation: Jt. Lai et Jym. Lee, REDISTRIBUTION OF CONSTITUENT ELEMENTS IN PD GE CONTACTS TO N-TYPE GAAS USING RAPID THERMAL ANNEALING/, Journal of applied physics, 76(3), 1994, pp. 1686-1690
ENHANCEMENT OF ELECTRON-TRANSFER AND NEGATIVE DIFFERENTIAL RESISTANCEIN GAAS-BASED REAL-SPACE TRANSFER DEVICES BY USING STRAINED INGAAS CHANNEL LAYERS
Authors: LAI JT LEE JYM
Citation: Jt. Lai et Jym. Lee, ENHANCEMENT OF ELECTRON-TRANSFER AND NEGATIVE DIFFERENTIAL RESISTANCEIN GAAS-BASED REAL-SPACE TRANSFER DEVICES BY USING STRAINED INGAAS CHANNEL LAYERS, Journal of applied physics, 76(3), 1994, pp. 1965-1967
ALGAAS GAAS CHARGE INJECTION TRANSISTOR NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR FABRICATED WITH SHALLOW PD GE OHMIC CONTACTS/
Authors: LAI JT LEE JYM
Citation: Jt. Lai et Jym. Lee, ALGAAS GAAS CHARGE INJECTION TRANSISTOR NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR FABRICATED WITH SHALLOW PD GE OHMIC CONTACTS/, Applied physics letters, 64(3), 1994, pp. 306-308
PD GE OHMIC CONTACTS TO N-TYPE GAAS FORMED BY RAPID THERMAL ANNEALING/
Authors: LAI JT LEE JYM
Citation: Jt. Lai et Jym. Lee, PD GE OHMIC CONTACTS TO N-TYPE GAAS FORMED BY RAPID THERMAL ANNEALING/, Applied physics letters, 64(2), 1994, pp. 229-231
ELECTRICAL CHARACTERISTICS OF BARIUM-TITANATE FILMS PREPARED BY LASER-ABLATION
Authors: YEH MH LIU YC LIU KS LIN IN LEE JYM CHENG HF
Citation: Mh. Yeh et al., ELECTRICAL CHARACTERISTICS OF BARIUM-TITANATE FILMS PREPARED BY LASER-ABLATION, Journal of applied physics, 74(3), 1993, pp. 2143-2145
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