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Results:
1-12
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Results: 12
Authors:
YAMAMICHI S
LESAICHERRE PY
YAMAGUCHI H
TAKEMURA K
SONE S
YABUTA H
SATO K
TAMURA T
NAKAJIMA K
OHNISHI S
TOKASHIKI K
HAYASHI Y
KATO Y
MIYASAKA Y
YOSHIDA M
ONO H
Citation: S. Yamamichi et al., A STACKED CAPACITOR TECHNOLOGY WITH ECR PLASMA MOCVD (BA,SR)TIO3 AND RUO2 RU/TIN/TISIX STORAGE NODES FOR GB-SCALE DRAMS/, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1076-1083
Authors:
SONE S
YABUTA H
KATO Y
IIZUKA T
YAMAMICHI S
YAMAGUCHI H
LESAICHERRE PY
NISHIMOTO S
YOSHIDA M
Citation: S. Sone et al., LOW-TEMPERATURE DEPOSITION OF (BA, SR)TIO3 FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 35(9B), 1996, pp. 5089-5093
Authors:
YOSHIDA M
YABUTA H
SONE S
TAKEMURA K
SAKUMA T
KATO Y
MIYASAKA Y
IIZUKA T
YAMAMICHI S
YAMAGUCHI H
LESAICHERRE PY
NISHIMOTO S
Citation: M. Yoshida et al., THIN-FILM (BA,SR)TIO3 OVER STACKED RUO2 NODES FOR GBIT DRAM CAPACITORS, NEC research & development, 37(3), 1996, pp. 305-316
Authors:
YAMAMICHI S
MURAMATSU Y
LESAICHERRE PY
ONO H
Citation: S. Yamamichi et al., INFLUENCE OF STRONTIUM IMPURITIES ON SILICON SUBSTRATES DURING THERMAL-PROCESSING, JPN J A P 1, 34(9B), 1995, pp. 5188-5192
Authors:
TAKEMURA K
YAMAMICHI S
LESAICHERRE PY
TOKASHIKI K
MIYAMOTO H
ONO H
MIYASAKA Y
YOSHIDA H
Citation: K. Takemura et al., RUO2 TIN-BASED STORAGE ELECTRODES FOR (BA,SR)TIO3 DYNAMIC RANDOM-ACCESS MEMORY CAPACITORS/, JPN J A P 1, 34(9B), 1995, pp. 5224-5229
Authors:
LESAICHERRE PY
YAMAGUCHI H
MIYASAKA Y
WATANABE H
ONO H
YOSHIDA M
Citation: Py. Lesaicherre et al., SRTIO3 THIN-FILMS BY MOCVD FOR 1 GBIT DRAM APPLICATION, Integrated ferroelectrics, 8(1-2), 1995, pp. 201
A GBIT-SCALE DRAM STACKED CAPACITOR WITH ECR MOCVD SRTIO3 OVER RIE PATTERNED RUO2 TIN STORAGE NODES/
Authors:
LESAICHERRE PY
YAMAMICHI S
TAKEMURA K
YAMAGUCHI H
TOKASHIKI K
MIYASAKA Y
YOSHIDA M
ONO H
Citation: Py. Lesaicherre et al., A GBIT-SCALE DRAM STACKED CAPACITOR WITH ECR MOCVD SRTIO3 OVER RIE PATTERNED RUO2 TIN STORAGE NODES/, Integrated ferroelectrics, 11(1-4), 1995, pp. 81-100
Authors:
YOSHIDA M
YAMAGUCHI H
SAKUMA T
MIYASAKA Y
LESAICHERRE PY
ISHITANI A
Citation: M. Yoshida et al., CHEMICAL-VAPOR-DEPOSITION OF (BA,SR)TIO3, Journal of the Electrochemical Society, 142(1), 1995, pp. 244-248
Authors:
KAMIYAMA S
SUZUKI H
LESAICHERRE PY
ISHITANI A
Citation: S. Kamiyama et al., HIGHLY RELIABLE ULTRA-THIN TANTALUM OXIDE CAPACITORS FOR ULSI DRAMS, IEICE transactions on electronics, E77C(3), 1994, pp. 379-384
Authors:
YAMAGUCHI H
LESAICHERRE PY
SAKUMA T
MIYASAKA Y
ISHITANI A
YOSHIDA M
Citation: H. Yamaguchi et al., STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SRTIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 32(9B), 1993, pp. 4069-4073
Authors:
ISHITANI A
LESAICHERRE PY
KAMIYAMA S
ANDO K
WATANABE H
Citation: A. Ishitani et al., TRENDS IN CAPACITOR DIELECTRICS FOR DRAMS, IEICE transactions on electronics, E76C(11), 1993, pp. 1564-1581
Authors:
KAMIYAMA S
LESAICHERRE PY
SUZUKI H
SAKAI A
NISHIYAMA I
ISHITANI A
Citation: S. Kamiyama et al., ULTRATHIN TANTALUM OXIDE CAPACITOR DIELECTRIC LAYERS FABRICATED USINGRAPID THERMAL NITRIDATION PRIOR TO LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 140(6), 1993, pp. 1617-1625
Risultati:
1-12
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