AAAAAA

   
Results: 1-8 |
Results: 8
SUPPRESSION OF COBALT SILICIDE AGGLOMERATION USING NITROGEN (N-2(+)) IMPLANTATION
Authors: SUN WT LIAW MC HSU CCH
Citation: Wt. Sun et al., SUPPRESSION OF COBALT SILICIDE AGGLOMERATION USING NITROGEN (N-2(+)) IMPLANTATION, IEEE electron device letters, 19(5), 1998, pp. 163-166
IMPACT OF NITROGEN (N-2(-STABILITY OF COBALT SILICIDE FORMED ON POLYSILICON GATE()) IMPLANTATION INTO POLYSILICON GATE ON THERMAL)
Authors: SUN WT LIAW MC HSIEH KC HSU CCH
Citation: Wt. Sun et al., IMPACT OF NITROGEN (N-2(-STABILITY OF COBALT SILICIDE FORMED ON POLYSILICON GATE()) IMPLANTATION INTO POLYSILICON GATE ON THERMAL), I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1912-1919
SUPPRESSION OF BORON PENETRATION IN P-POLY-SI GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR USING NITROGEN IMPLANTATION()
Authors: CHAO TS CHIEN CH HAO CP LIAW MC CHU CH CHANG CY LEI TF SUN WT HSU CH
Citation: Ts. Chao et al., SUPPRESSION OF BORON PENETRATION IN P-POLY-SI GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR USING NITROGEN IMPLANTATION(), JPN J A P 1, 36(3B), 1997, pp. 1364-1367
IMPROVING GATE OXIDE INTEGRITY OF COBALT SILICIDED P-TYPE POLYSILICONGATE USING ARSENIC IMPLANTATION
Authors: SUN WT LIAW WW LIAW MC HSIEH KC HSU CCH
Citation: Wt. Sun et al., IMPROVING GATE OXIDE INTEGRITY OF COBALT SILICIDED P-TYPE POLYSILICONGATE USING ARSENIC IMPLANTATION, JPN J A P 2, 36(2A), 1997, pp. 89-92
QUANTUM-SIZE EFFECTS ON PHOTOLUMINESCENCE FROM SI NANOCRYSTALS IN PECVD SILICON-RICH-OXIDE
Authors: YANG CS LIN CJ KUEI PY HORNG SF HSU CCH LIAW MC
Citation: Cs. Yang et al., QUANTUM-SIZE EFFECTS ON PHOTOLUMINESCENCE FROM SI NANOCRYSTALS IN PECVD SILICON-RICH-OXIDE, Applied surface science, 114, 1997, pp. 116-120
ANTIMONY COIMPLANTATION TO SUPPRESS BORON-PENETRATION IN P-POLY GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS()
Authors: SUN WT YANG CS LIAW MC HSU CCH
Citation: Wt. Sun et al., ANTIMONY COIMPLANTATION TO SUPPRESS BORON-PENETRATION IN P-POLY GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS(), JPN J A P 2, 35(3B), 1996, pp. 377-379
MECHANISM OF NITROGEN COIMPLANT FOR SUPPRESSING BORON PENETRATION IN P(-POLYCRYSTALLINE SILICON GATE OF P METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR())
Authors: CHAO TS LIAW MC CHU CH CHANG CY CHIEN CH HAO CP LEI TF
Citation: Ts. Chao et al., MECHANISM OF NITROGEN COIMPLANT FOR SUPPRESSING BORON PENETRATION IN P(-POLYCRYSTALLINE SILICON GATE OF P METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR()), Applied physics letters, 69(12), 1996, pp. 1781-1782
SYNTHESIS AND CHARACTERIZATION OF POLYMERIC AG(I)-TELLUROETHER AND CU(I)-DIORGANYL DITELLURIDE COMPLEXES - CRYSTAL-STRUCTURES OF [AG(METE(CH2)(3)TEME)(2)](N)[BF4](N), [(MU(2)-METETEME)CU(MU-CL)](N), AND CCH3)(4)(MU(2)-(P-C6H4F)TETE(P-C6H4F))(2)][BF4](2)
Authors: LIAW WF LAI CH CHIOU SJ HORNG YC CHOU CC LIAW MC LEE GH PENG SM
Citation: Wf. Liaw et al., SYNTHESIS AND CHARACTERIZATION OF POLYMERIC AG(I)-TELLUROETHER AND CU(I)-DIORGANYL DITELLURIDE COMPLEXES - CRYSTAL-STRUCTURES OF [AG(METE(CH2)(3)TEME)(2)](N)[BF4](N), [(MU(2)-METETEME)CU(MU-CL)](N), AND CCH3)(4)(MU(2)-(P-C6H4F)TETE(P-C6H4F))(2)][BF4](2), Inorganic chemistry, 34(14), 1995, pp. 3755-3759
Risultati: 1-8 |