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Results: 1-10 |
Results: 10
MODULATION OF A VERTICAL-CAVITY SURFACE-EMITTING LASER USING AN INTRACAVITY QUANTUM-WELL ABSORBER
Authors: LIM SF HUDGINGS JA CHEN LP LI GS YUEN WP LAU KY CHANGHASNAIN CJ
Citation: Sf. Lim et al., MODULATION OF A VERTICAL-CAVITY SURFACE-EMITTING LASER USING AN INTRACAVITY QUANTUM-WELL ABSORBER, IEEE photonics technology letters, 10(3), 1998, pp. 319-321
SUBSTRATE INFLUENCE ON THE FORMATION OF FESI AND FESI2 FILMS FROM CIS-FE(SICL3)(2)(CO)(4) BY LPCVD
Authors: LUO L ZYBILL CE ANG HG LIM SF CHUA DHC LIN J WEE ATS TAN KL
Citation: L. Luo et al., SUBSTRATE INFLUENCE ON THE FORMATION OF FESI AND FESI2 FILMS FROM CIS-FE(SICL3)(2)(CO)(4) BY LPCVD, Thin solid films, 325(1-2), 1998, pp. 87-91
THE PHYSICS OF NEGATIVE DIFFERENTIAL RESISTANCE OF AN INTRACAVITY VOLTAGE-CONTROLLED ABSORBER IN A VERTICAL-CAVITY SURFACE-EMITTING LASER
Authors: HUDGINGS JA STONE RJ LIM SF LI GS YUEN WP LAU KY CHANGHASNAIN CJ
Citation: Ja. Hudgings et al., THE PHYSICS OF NEGATIVE DIFFERENTIAL RESISTANCE OF AN INTRACAVITY VOLTAGE-CONTROLLED ABSORBER IN A VERTICAL-CAVITY SURFACE-EMITTING LASER, Applied physics letters, 73(13), 1998, pp. 1796-1798
VERTICAL-CAVITY LASERS WITH AN INTRACAVITY RESONANT DETECTOR
Authors: LIM SF LI GS YUEN WP CHANGHASNAIN CJ
Citation: Sf. Lim et al., VERTICAL-CAVITY LASERS WITH AN INTRACAVITY RESONANT DETECTOR, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 416-421
INTRACAVITY RESONANT QUANTUM-WELL PHOTODETECTION OF A VERTICAL-CAVITYSURFACE-EMITTING LASER
Authors: LIM SF LI GS YUEN W CHANGHASNAIN CJ
Citation: Sf. Lim et al., INTRACAVITY RESONANT QUANTUM-WELL PHOTODETECTION OF A VERTICAL-CAVITYSURFACE-EMITTING LASER, Electronics Letters, 33(7), 1997, pp. 597-598
SELF-PULSATING AND BISTABLE VCSEL WITH CONTROLLABLE INTRACAVITY QUANTUM-WELL SATURABLE ABSORBER
Authors: LIM SF HUDGINGS JA LI GS YUEN W LAU KY CHANGHASNAIN CJ
Citation: Sf. Lim et al., SELF-PULSATING AND BISTABLE VCSEL WITH CONTROLLABLE INTRACAVITY QUANTUM-WELL SATURABLE ABSORBER, Electronics Letters, 33(20), 1997, pp. 1708-1710
ACCURATE MOLECULAR-BEAM EPITAXIAL-GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER USING DIODE-LASER REFLECTOMETRY
Authors: LI GS YUEN W TOH K ENG LE LIM SF CHANGHASNAIN CJ
Citation: Gs. Li et al., ACCURATE MOLECULAR-BEAM EPITAXIAL-GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER USING DIODE-LASER REFLECTOMETRY, IEEE photonics technology letters, 7(9), 1995, pp. 971-973
A PROPOSAL OF BROAD-BANDWIDTH VERTICAL-CAVITY LASER-AMPLIFIER
Authors: LIM SF CHANGHASNAIN CJ
Citation: Sf. Lim et Cj. Changhasnain, A PROPOSAL OF BROAD-BANDWIDTH VERTICAL-CAVITY LASER-AMPLIFIER, IEEE photonics technology letters, 7(11), 1995, pp. 1240-1242
POLARIZATION AND MODAL BEHAVIOR OF LOW-THRESHOLD OXIDE AND AIRGAP CONFINED VERTICAL-CAVITY LASERS
Authors: LI GS LIM SF YUEN W CHANGHASNAIN CJ
Citation: Gs. Li et al., POLARIZATION AND MODAL BEHAVIOR OF LOW-THRESHOLD OXIDE AND AIRGAP CONFINED VERTICAL-CAVITY LASERS, Electronics Letters, 31(23), 1995, pp. 2014-2015
BURIED HETEROSTRUCTURE 0.98 MU-M INGAAS INGAASP/INGAP LASERS/
Authors: VAIL EC LIM SF WU YA FRANCIS DA CHANGHASNAIN CJ BHAT R CANEAU C
Citation: Ec. Vail et al., BURIED HETEROSTRUCTURE 0.98 MU-M INGAAS INGAASP/INGAP LASERS/, Applied physics letters, 63(16), 1993, pp. 2183-2185
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