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Results: 1-18 |
Results: 18
CHARACTERIZATION OF GROUP-III NITRIDE SEMICONDUCTORS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY
Authors: CHANDRASEKHAR D SMITH DJ STRITE S LIN ME MORKOC H
Citation: D. Chandrasekhar et al., CHARACTERIZATION OF GROUP-III NITRIDE SEMICONDUCTORS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY, Journal of crystal growth, 152(3), 1995, pp. 135-142
FIELD-EMISSION FROM NARROW BANDS ABOVE THE FERMI-LEVEL OF NANOMETER-SCALE OBJECTS
Authors: PURCELL ST BINH VT GARCIA N LIN ME ANDRES RP REIFENBERGER R
Citation: St. Purcell et al., FIELD-EMISSION FROM NARROW BANDS ABOVE THE FERMI-LEVEL OF NANOMETER-SCALE OBJECTS, Physical review. B, Condensed matter, 49(24), 1994, pp. 17259-17263
OBSERVATION OF NEGATIVE-DIFFERENTIAL-RESISTANCE IN STRAINED N-TYPE SISIGE MODFETS/
Authors: ZHOU GL HUANG FY FAN FZ LIN ME MORKOC H
Citation: Gl. Zhou et al., OBSERVATION OF NEGATIVE-DIFFERENTIAL-RESISTANCE IN STRAINED N-TYPE SISIGE MODFETS/, Solid-state electronics, 37(10), 1994, pp. 1687-1689
LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES
Authors: MORKOC H STRITE S GAO GB LIN ME SVERDLOV B BURNS M
Citation: H. Morkoc et al., LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES, Journal of applied physics, 76(3), 1994, pp. 1363-1398
LOW-RESISTANCE OHMIC CONTACTS ON WIDE BAND-GAP GAN
Authors: LIN ME MA Z HUANG FY FAN ZF ALLEN LH MORKOC H
Citation: Me. Lin et al., LOW-RESISTANCE OHMIC CONTACTS ON WIDE BAND-GAP GAN, Applied physics letters, 64(8), 1994, pp. 1003-1005
REACTIVE ION ETCHING OF GAN USING BCL3
Authors: LIN ME FAN ZF MA Z ALLEN LH MORKOC H
Citation: Me. Lin et al., REACTIVE ION ETCHING OF GAN USING BCL3, Applied physics letters, 64(7), 1994, pp. 887-888
PHOTOLUMINESCENCE OF ZINCBLENDE GAN UNDER HYDROSTATIC-PRESSURE
Authors: HWANG SJ SHAN W HAUENSTEIN RJ SONG JJ LIN ME STRITE S SVERDLOV BN MORKOC H
Citation: Sj. Hwang et al., PHOTOLUMINESCENCE OF ZINCBLENDE GAN UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 64(22), 1994, pp. 2928-2930
NONALLOYED OHMIC CONTACTS ON GAN USING INN GAN SHORT-PERIOD SUPERLATTICES/
Authors: LIN ME HUANG FY MORKOC H
Citation: Me. Lin et al., NONALLOYED OHMIC CONTACTS ON GAN USING INN GAN SHORT-PERIOD SUPERLATTICES/, Applied physics letters, 64(19), 1994, pp. 2557-2559
ELECTRONIC STATES AND STRUCTURAL STABILITY OF SUPPORTED AU CLUSTERS
Authors: LIN ME RAMACHANDRA A ANDRES RP REIFENBERGER R
Citation: Me. Lin et al., ELECTRONIC STATES AND STRUCTURAL STABILITY OF SUPPORTED AU CLUSTERS, Zeitschrift fur Physik. D, Atoms, molecules and clusters, 26(1-4), 1993, pp. 59-63
PROGRESS AND PROSPECTS FOR GAN AND THE III-V-NITRIDE SEMICONDUCTORS
Authors: STRITE S LIN ME MORKOC H
Citation: S. Strite et al., PROGRESS AND PROSPECTS FOR GAN AND THE III-V-NITRIDE SEMICONDUCTORS, Thin solid films, 231(1-2), 1993, pp. 197-210
LOW-TEMPERATURE GROWTH OF SINGLE-CRYSTALLINE CUBIC SIC ON SI(111) BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors: ZHOU GL MA Z LIN ME SHEN TC ALLEN LH MORKOC H
Citation: Gl. Zhou et al., LOW-TEMPERATURE GROWTH OF SINGLE-CRYSTALLINE CUBIC SIC ON SI(111) BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 134(3-4), 1993, pp. 167-173
GROWTH AND CHARACTERIZATION OF GAN ON C-PLANE (0001) SAPPHIRE SUBSTRATES BY PLASMA-ENHANCED MOLECULAR-BEAM EPITAXY
Authors: LIN ME SVERDLOV BN MORKOC H
Citation: Me. Lin et al., GROWTH AND CHARACTERIZATION OF GAN ON C-PLANE (0001) SAPPHIRE SUBSTRATES BY PLASMA-ENHANCED MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(8), 1993, pp. 5038-5041
REFRACTIVE-INDEXES OF WURTZITE AND ZINCBLENDE GAN
Authors: LIN ME SVERDLOV BN STRITE S MORKOC H DRAKIN AE
Citation: Me. Lin et al., REFRACTIVE-INDEXES OF WURTZITE AND ZINCBLENDE GAN, Electronics Letters, 29(20), 1993, pp. 1759-1761
P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES
Authors: LIN ME XUE G ZHOU GL GREENE JE MORKOC H
Citation: Me. Lin et al., P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES, Applied physics letters, 63(7), 1993, pp. 932-933
THERMAL-STABILITY OF GAN INVESTIGATED BY LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY
Authors: LIN ME SVERDLOV BN MORKOC H
Citation: Me. Lin et al., THERMAL-STABILITY OF GAN INVESTIGATED BY LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY, Applied physics letters, 63(26), 1993, pp. 3625-3627
SI SIGE MODULATION-DOPED STRUCTURES WITH THIN BUFFER LAYERS - EFFECT OF SUBSTRATE ORIENTATION/
Authors: ZHOU GL MA Z LIN ME REED J ALLEN LH MORKOC H
Citation: Gl. Zhou et al., SI SIGE MODULATION-DOPED STRUCTURES WITH THIN BUFFER LAYERS - EFFECT OF SUBSTRATE ORIENTATION/, Applied physics letters, 63(15), 1993, pp. 2094-2096
A COMPARATIVE-STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: LIN ME SVERDLOV B ZHOU GL MORKOC H
Citation: Me. Lin et al., A COMPARATIVE-STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 62(26), 1993, pp. 3479-3481
SI3N4 SI/N-GAAS CAPACITOR WITH MINIMUM INTERFACE DENSITY IN THE 10(10) EV(-1) CM(-2) RANGE/
Authors: WANG Z LIN ME BISWAS D MAZHARI B TERAGUCHI N FAN Z GUI X MORKOC H
Citation: Z. Wang et al., SI3N4 SI/N-GAAS CAPACITOR WITH MINIMUM INTERFACE DENSITY IN THE 10(10) EV(-1) CM(-2) RANGE/, Applied physics letters, 62(23), 1993, pp. 2977-2979
Risultati: 1-18 |