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Results: 1-9 |
Results: 9
SILICON-CARBIDE GROWN BY LIQUID-PHASE EPITAXY IN MICROGRAVITY
Authors: YAKIMOVA R SYVAJARVI M LOCKOWANDT C LINNARSSON MK RADAMSON HH JANZEN E
Citation: R. Yakimova et al., SILICON-CARBIDE GROWN BY LIQUID-PHASE EPITAXY IN MICROGRAVITY, Journal of materials research, 13(7), 1998, pp. 1812-1815
BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC
Authors: NORDELL N SCHONER A ROTTNER K PERSSON POA WAHAB Q HULTMAN L LINNARSSON MK OLSSON E
Citation: N. Nordell et al., BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC, Journal of electronic materials, 27(7), 1998, pp. 833-837
SIMS ANALYSIS OF EPITAXIAL LAYERS FOR POWER-ELECTRONICS AND MICROELECTRONICS
Authors: SVENSSON BG LINNARSSON MK CARDENAS J PETRAVIC M
Citation: Bg. Svensson et al., SIMS ANALYSIS OF EPITAXIAL LAYERS FOR POWER-ELECTRONICS AND MICROELECTRONICS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1034-1039
ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC
Authors: DOYLE JP LINNARSSON MK PELLEGRINO P KESKITALO N SVENSSON BG SCHONER A NORDELL N LINDSTROM JL
Citation: Jp. Doyle et al., ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC, Journal of applied physics, 84(3), 1998, pp. 1354-1357
OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC
Authors: DOYLE JP SCHONER A NORDELL N GALECKAS A BLEICHNER H LINNARSSON MK LINNROS J SVENSSON BG
Citation: Jp. Doyle et al., OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC, Journal of applied physics, 83(7), 1998, pp. 3649-3651
CONTROL OF AL-DOPING AND B-DOPING TRANSIENTS IN 6H AND 4H SIC GROWN BY VAPOR-PHASE EPITAXY
Authors: NORDELL N SCHONER A LINNARSSON MK
Citation: N. Nordell et al., CONTROL OF AL-DOPING AND B-DOPING TRANSIENTS IN 6H AND 4H SIC GROWN BY VAPOR-PHASE EPITAXY, Journal of electronic materials, 26(3), 1997, pp. 187-192
SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES
Authors: SVENSSON BG LINNARSSON MK MOHADJERI B PETRAVIC M WILLIAMS JS
Citation: Bg. Svensson et al., SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 363-369
INFLUENCE OF LAYER THICKNESS AND PRIMARY ION ON PROFILE BROADENING DURING SPUTTERING OF AL0.5GA0.5AS GAAS STRUCTURES/
Authors: LINNARSSON MK SVENSSON BG PASKA ZF BORGLIND J
Citation: Mk. Linnarsson et al., INFLUENCE OF LAYER THICKNESS AND PRIMARY ION ON PROFILE BROADENING DURING SPUTTERING OF AL0.5GA0.5AS GAAS STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 395-398
SPUTTER PROFILING OF ALGAAS GAAS SUPERLATTICE STRUCTURES USING OXYGENAND ARGON IONS/
Authors: LINNARSSON MK SVENSSON BG ANDERSSON TG WANG SM PASKA ZF
Citation: Mk. Linnarsson et al., SPUTTER PROFILING OF ALGAAS GAAS SUPERLATTICE STRUCTURES USING OXYGENAND ARGON IONS/, Applied surface science, 70-1, 1993, pp. 40-43
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