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Results: 26-50/70
Authors:
ZHOU W
SHEU S
LIOU JJ
HUANG CI
Citation: W. Zhou et al., ANALYSIS OF NONUNIFORM CURRENT AND TEMPERATURE DISTRIBUTIONS IN THE EMITTER FINGER OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 39(12), 1996, pp. 1709-1721
Authors:
SCHWIERZ F
ROSSERG M
NUERNBERGK D
SCHIPANSKI D
FOSTER H
LIOU JJ
Citation: F. Schwierz et al., AN IMPROVED VELOCITY OVERSHOOT MODEL FOR SUBMICRON-GATE MESFETS, Solid-state electronics, 39(10), 1996, pp. 1522-1523
EFFECTS OF HIGH-LEVEL FREE-CARRIER INJECTION ON THE BASE TRANSIT-TIMEOF BIPOLAR JUNCTION TRANSISTORS
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
SANCHEZ FG
Citation: Y. Yue et al., EFFECTS OF HIGH-LEVEL FREE-CARRIER INJECTION ON THE BASE TRANSIT-TIMEOF BIPOLAR JUNCTION TRANSISTORS, Solid-state electronics, 39(1), 1996, pp. 27-31
Authors:
HO CS
LIOU JJ
GEORGIOPOULOS M
CHRISTODOULOU C
Citation: Cs. Ho et al., A MIXED ANALOG DIGITAL VLSI DESIGN AND SIMULATION OF AN ADAPTIVE RESONANCE THEORY (ART) NEURAL-NETWORK ARCHITECTURE/, Simulation, 66(1), 1996, pp. 31-39
Authors:
SHEU S
LIOU JJ
HUANG CI
WILLIAMSON DC
Citation: S. Sheu et al., MODELING THE POST-BURN-IN ABNORMAL BASE CURRENT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 79(9), 1996, pp. 7348-7352
Authors:
LIOU JJ
YUE Y
Citation: Jj. Liou et Y. Yue, AN IMPROVED MODEL FOR 4-TERMINAL JUNCTION FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1309-1311
Authors:
LIOU JJ
JENKINS TJ
LIOU LL
NEIDHARD R
BARLAGE DW
FITCH R
BARRETTE JP
MACK M
BOZADA CA
LEE RHY
DETTMER RW
SEWELL JS
Citation: Jj. Liou et al., BIAS, FREQUENCY, AND AREA DEPENDENCIES OF HIGH-FREQUENCY NOISE IN ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 116-122
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
Citation: Y. Yue et al., RELATIVE ERRORS OF FREE-CARRIER DENSITY AT DIFFERENT TEMPERATURES CALCULATED FROM APPROXIMATIONS FOR THE FERMI-DIRAC INTEGRAL, JPN J A P 1, 34(5A), 1995, pp. 2286-2287
Authors:
HASSELBECK MP
LIOU JJ
Citation: Mp. Hasselbeck et Jj. Liou, TRANSIENT ANALYSIS OF MINORITY-CARRIER DIFFUSION IN THE BASE OF P N JUNCTION DIODES AND BIPOLAR-TRANSISTORS/, JPN J A P 1, 34(10), 1995, pp. 5562-5566
Authors:
CHRISTODOULOU CG
HUANG J
GEORGIOPOULOS M
LIOU JJ
Citation: Cg. Christodoulou et al., DESIGN OF GRATINGS AND FREQUENCY-SELECTIVE SURFACES USING FUZZY ARTMAP NEURAL NETWORKS, Journal of electromagnetic waves and applications, 9(1-2), 1995, pp. 17-36
Authors:
CHRISTODOULOU CG
HUANG J
GEORGIOPOULOS M
LIOU JJ
Citation: Cg. Christodoulou et al., ON THE APPLICATION OF A NEURAL-NETWORK IN THE DESIGN OF CASCADED GRATINGS, Microwave and optical technology letters, 8(4), 1995, pp. 171-175
Authors:
LIOU JJ
ORTIZCONDE A
LIOU LL
HUANG CI
Citation: Jj. Liou et al., THERMAL-AVALANCHE INTERACTING BEHAVIOR OF ALGAAS GAAS MULTI-EMITTER FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 38(9), 1995, pp. 1645-1648
Authors:
KAGER A
LIOU JJ
HUANG CI
Citation: A. Kager et al., A NUMERICAL STUDY OF THE EFFECT OF BASE AND COLLECTOR STRUCTURES ON THE PERFORMANCE OF ALGAAS GAAS MULTI-FINGER HBTS/, Solid-state electronics, 38(7), 1995, pp. 1339-1346
Authors:
YI X
LIOU JJ
Citation: X. Yi et Jj. Liou, SURFACE OXIDATION OF POLYCRYSTALLINE CADMIUM TELLURIDE THIN-FILMS FORSCHOTTKY-BARRIER JUNCTION SOLAR-CELLS, Solid-state electronics, 38(6), 1995, pp. 1151-1154
Authors:
NARAYANAN R
ORTIZCONDE A
LIOU JJ
SANCHEZ FJG
PARTHASARATHY A
Citation: R. Narayanan et al., 2-DIMENSIONAL NUMERICAL-ANALYSIS FOR EXTRACTING THE EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS, Solid-state electronics, 38(6), 1995, pp. 1155-1159
Authors:
LIOU JJ
HUANG CI
BARRETTE J
Citation: Jj. Liou et al., A MODEL TO MONITOR THE CURRENT GAIN LONG-TERM INSTABILITY IN ALGAAS GAAS HBTS BASED ON NOISE AND LEAKAGE CURRENT CHARACTERISTICS/, Solid-state electronics, 38(4), 1995, pp. 761-765
Authors:
LIOU JJ
Citation: Jj. Liou, AN ANALYTICAL MODEL FOR THE CURRENT TRANSPORT OF GRADED HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 38(4), 1995, pp. 946-948
Authors:
HO CS
LIOU JJ
CHEN DL
LIOU LL
HUANG CI
Citation: Cs. Ho et al., COMBINED EFFECTS OF GRADED AND SETBACK LAYERS ON THE ALGAAS GAAS HBT CURRENT-VOLTAGE CHARACTERISTICS/, Solid-state electronics, 38(3), 1995, pp. 627-632
CURRENT TRANSPORT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS OPERATING BETWEEN 300 AND 500 K/
Authors:
HO CS
LIOU JJ
PARTHASARATHY A
LIN SF
HUANG CI
Citation: Cs. Ho et al., CURRENT TRANSPORT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS OPERATING BETWEEN 300 AND 500 K/, Solid-state electronics, 38(10), 1995, pp. 1759-1763
Authors:
LIOU JJ
HO CS
Citation: Jj. Liou et Cs. Ho, A PHYSICAL MODEL FOR THE BASE TRANSIT-TIME OF ADVANCED BIPOLAR-TRANSISTORS, Solid-state electronics, 38(1), 1995, pp. 143-147
Authors:
ORTIZCONDE A
SANCHEZ FJG
LIOU JJ
ANDRIAN J
LAURENCE RJ
SCHMIDT PE
Citation: A. Ortizconde et al., A GENERALIZED-MODEL FOR A 2-TERMINAL DEVICE AND ITS APPLICATIONS TO PARAMETER EXTRACTION, Solid-state electronics, 38(1), 1995, pp. 265-266
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
Citation: Y. Yue et al., HIGH-LEVEL INJECTION IN QUASI-NEUTRAL REGION OF N P JUNCTION DEVICES - NUMERICAL RESULTS AND EMPIRICAL-MODEL/, Journal of applied physics, 77(4), 1995, pp. 1611-1615
Authors:
HO CS
LIOU JJ
Citation: Cs. Ho et Jj. Liou, VLSI NEURAL-NETWORK CIRCUIT USING A MULTIPLE-INPUT TRANSCONDUCTANCE AMPLIFIER AND DIGITAL MULTIPLEXERS, International journal of electronics, 79(5), 1995, pp. 577-583
Authors:
HO CS
LIOU JJ
Citation: Cs. Ho et Jj. Liou, DIGITAL VLSI CIRCUIT-DESIGN AND SIMULATION OF AN ADAPTIVE RESONANCE THEORY NEURAL-NETWORK, International journal of electronics, 79(2), 1995, pp. 151-162
Authors:
SANCHEZ FJG
ORTIZCONDE A
LIOU JJ
Citation: Fjg. Sanchez et al., CALCULATING DOUBLE-EXPONENTIAL DIODE MODEL PARAMETERS FROM PREVIOUSLYEXTRACTED SINGLE-EXPONENTIAL MODEL PARAMETERS, Electronics Letters, 31(1), 1995, pp. 71-72