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Results: 1-25 | 26-30
Results: 1-25/30
EFFECTS OF CARBON ON BORON-DIFFUSION IN SIGE - PRINCIPLES AND IMPACT ON BIPOLAR-DEVICES
Authors: OSTEN HJ HEINEMANN B KNOLL D LIPPERT G RUCKER H
Citation: Hj. Osten et al., EFFECTS OF CARBON ON BORON-DIFFUSION IN SIGE - PRINCIPLES AND IMPACT ON BIPOLAR-DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1750-1753
THE P-]PI(+)+D REACTION CLOSE TO THRESHOLD AT COSY(P)
Authors: DROCHNER M ERNST J FORTSCH S FREINDL L FREKERS D GARSKE W GREWER K IGEL S JAHN R JARCZYK L KEMMERLING G KILIAN K KLICZEWSKI S KLIMALA W KOLEV D KUTSAROVA T LIPPERT G MACHNER H MAIER R NAKE C RAZEN B VONROSSEN P ROY BR SCHO K SIUDAK R SMYRSKI J STRZALKOWSKI A TSENOV R ZOLNIERCZUK PA ZWOLL K
Citation: M. Drochner et al., THE P-]PI(+)+D REACTION CLOSE TO THRESHOLD AT COSY(P), Nuclear physics. A, 643(1), 1998, pp. 55-82
CARBON-CONTAINING GROUP-IV HETEROSTRUCTURES ON SI - PROPERTIES AND DEVICE APPLICATIONS
Authors: OSTEN HJ BARTH R FISCHER G HEINEMANN B KNOLL D LIPPERT G RUCKER H SCHLEY P ROPKE W
Citation: Hj. Osten et al., CARBON-CONTAINING GROUP-IV HETEROSTRUCTURES ON SI - PROPERTIES AND DEVICE APPLICATIONS, Thin solid films, 321, 1998, pp. 11-14
OPTIMIZED PROCESSING FOR DIFFERENTIALLY MOLECULAR-BEAM EPITAXY-GROWN SIGE(C) DEVICES
Authors: LIPPERT G OSTEN HJ BLUM K SORGE R SCHLEY P KRUGER D FISCHER G
Citation: G. Lippert et al., OPTIMIZED PROCESSING FOR DIFFERENTIALLY MOLECULAR-BEAM EPITAXY-GROWN SIGE(C) DEVICES, Thin solid films, 321, 1998, pp. 21-25
SUPPRESSED DIFFUSION OF BORON AND CARBON IN CARBON-RICH SILICON
Authors: RUCKER H HEINEMANN B ROPKE W KURPS R KRUGER D LIPPERT G OSTEN HJ
Citation: H. Rucker et al., SUPPRESSED DIFFUSION OF BORON AND CARBON IN CARBON-RICH SILICON, Applied physics letters, 73(12), 1998, pp. 1682-1684
PP-]D-PI(-DISTRIBUTIONS CLOSE TO THRESHOLD FROM 0.3 TO 5 MEV() PRECISE ANGULAR)
Authors: RAZEN B DROCHNER M ERNST J FORTSCH S FREINDL L FREKERS D GARSKE W GREWER K IGEL S JAHN R JARCZYK L KEMMERLING G KILIAN K KLICZEWSKI S KLIMALA W KOLEV D KUTSAROVA T LIPPERT G MACHNER H MAIER R NAKE C VONROSSEN P SCHO K SIUDAK R SMYRSKI J STRZALKOWSKI A TSENOV R ZOLNIERCZUK PA ZWOLL K
Citation: B. Razen et al., PP-]D-PI(-DISTRIBUTIONS CLOSE TO THRESHOLD FROM 0.3 TO 5 MEV() PRECISE ANGULAR), Nuclear physics. A, 626(1-2), 1997, pp. 63-71
TERNARY SIGEC ALLOYS - GROWTH AND PROPERTIES OF A NEW SEMICONDUCTING MATERIAL
Authors: OSTEN HJ KIM M LIPPERT G ZAUMSEIL P
Citation: Hj. Osten et al., TERNARY SIGEC ALLOYS - GROWTH AND PROPERTIES OF A NEW SEMICONDUCTING MATERIAL, Thin solid films, 294(1-2), 1997, pp. 93-97
A HYBRID GAUSSIAN AND PLANE-WAVE DENSITY-FUNCTIONAL SCHEME
Authors: LIPPERT G HUTTER J PARRINELLO M
Citation: G. Lippert et al., A HYBRID GAUSSIAN AND PLANE-WAVE DENSITY-FUNCTIONAL SCHEME, Molecular physics, 92(3), 1997, pp. 477-487
ENHANCEMENT OF SUBSTITUTIONAL CARBON INCORPORATION IN HYDROGEN-MEDIATED PSEUDOMORPHIC GROWTH OF STRAINED ALLOY LAYERS ON SI(001)
Authors: LIPPERT G ZAUMSEIL P OSTEN HJ KIM M
Citation: G. Lippert et al., ENHANCEMENT OF SUBSTITUTIONAL CARBON INCORPORATION IN HYDROGEN-MEDIATED PSEUDOMORPHIC GROWTH OF STRAINED ALLOY LAYERS ON SI(001), Journal of crystal growth, 175, 1997, pp. 473-476
IMPACT OF LOW-CARBON CONCENTRATIONS ON THE ELECTRICAL-PROPERTIES OF HIGHLY BORON-DOPED SIGE LAYERS
Authors: OSTEN HJ LIPPERT G GAWORZEWSKI P SORGE R
Citation: Hj. Osten et al., IMPACT OF LOW-CARBON CONCENTRATIONS ON THE ELECTRICAL-PROPERTIES OF HIGHLY BORON-DOPED SIGE LAYERS, Applied physics letters, 71(11), 1997, pp. 1522-1524
EFFECTS OF POSITIVE END-EXPIRATORY PRESSURE VENTILATION ON SPLANCHNICOXYGENATION IN HUMANS
Authors: BERENDES E LIPPERT G LOICK HM BRUSSEL T
Citation: E. Berendes et al., EFFECTS OF POSITIVE END-EXPIRATORY PRESSURE VENTILATION ON SPLANCHNICOXYGENATION IN HUMANS, Journal of cardiothoracic and vascular anesthesia, 10(5), 1996, pp. 598-602
EFFECTS OF ENFLURANE AND ISOFLURANE ON SPLANCHNIC OXYGENATION IN HUMANS
Authors: BERENDES E LIPPERT G LOICK HM BRUSSEL T
Citation: E. Berendes et al., EFFECTS OF ENFLURANE AND ISOFLURANE ON SPLANCHNIC OXYGENATION IN HUMANS, Journal of clinical anesthesia, 8(6), 1996, pp. 456-461
TOTAL AND DIFFERENTIAL CROSS-SECTIONS OF P-]PI(+)+D REACTIONS DOWN TO275-KEV ABOVE-THRESHOLD(P)
Authors: DROCHNER M ERNST J FORTSCH S FREINDL L FREKERS D GARSKE W HAWASH M IGEL S JAHN R JARCZYK L KEMMERLING G KILIAN K KLICZEWSKI S KLIMALA W KOLEV D KUTSAROVA T LIPPERT G MACHNER H MAIER R NAKE C RAZEN B VONROSSEN P SCHO K SIUDAK R SMYRSKI J STRZALKOWSKI A TSENOV R ZOLNIERCZUK PA ZWOLL K
Citation: M. Drochner et al., TOTAL AND DIFFERENTIAL CROSS-SECTIONS OF P-]PI(+)+D REACTIONS DOWN TO275-KEV ABOVE-THRESHOLD(P), Physical review letters, 77(3), 1996, pp. 454-457
RESPONSE FUNCTION BASIS-SETS - APPLICATION TO DENSITY-FUNCTIONAL CALCULATIONS
Authors: LIPPERT G HUTTER J BALLONE P PARRINELLO M
Citation: G. Lippert et al., RESPONSE FUNCTION BASIS-SETS - APPLICATION TO DENSITY-FUNCTIONAL CALCULATIONS, Journal of physical chemistry, 100(15), 1996, pp. 6231-6235
OPTICAL IN-SITU MEASUREMENTS OF TEMPERATURE AND LAYER THICKNESS IN SIMOLECULAR-BEAM EPITAXY
Authors: KIM M THIEME HJ LIPPERT G OSTEN HJ
Citation: M. Kim et al., OPTICAL IN-SITU MEASUREMENTS OF TEMPERATURE AND LAYER THICKNESS IN SIMOLECULAR-BEAM EPITAXY, Journal of crystal growth, 169(4), 1996, pp. 681-688
X-RAY PHOTOELECTRON SPECTROSCOPIC INVESTIGATION OF CARBON INCORPORATION AND SEGREGATION DURING PSEUDOMORPHIC GROWTH OF SI1-YCY ON SI(001)
Authors: KIM M LIPPERT G OSTEN HJ
Citation: M. Kim et al., X-RAY PHOTOELECTRON SPECTROSCOPIC INVESTIGATION OF CARBON INCORPORATION AND SEGREGATION DURING PSEUDOMORPHIC GROWTH OF SI1-YCY ON SI(001), Journal of applied physics, 80(10), 1996, pp. 5748-5752
OBSERVATION OF THE FORMATION OF A CARBON-RICH SURFACE-LAYER IN SILICON
Authors: OSTEN HJ METHFESSEL M LIPPERT G RUCKER H
Citation: Hj. Osten et al., OBSERVATION OF THE FORMATION OF A CARBON-RICH SURFACE-LAYER IN SILICON, Physical review. B, Condensed matter, 52(16), 1995, pp. 12179-12183
PHOSPHORUS DOPING IN MOLECULAR-BEAM EPITAXIAL GROWN SILICON AND SILICON-GERMANIUM USING A GAP DECOMPOSITION SOURCE
Authors: LIPPERT G OSTEN HJ KRUGER D
Citation: G. Lippert et al., PHOSPHORUS DOPING IN MOLECULAR-BEAM EPITAXIAL GROWN SILICON AND SILICON-GERMANIUM USING A GAP DECOMPOSITION SOURCE, Journal of crystal growth, 157(1-4), 1995, pp. 304-307
STRAIN-STABILIZED STRUCTURES ON SILICON GROWN WITH MBE
Authors: OSTEN HJ RUCKER H METHFESSEL M BUGIEL E RUVIMOV S LIPPERT G
Citation: Hj. Osten et al., STRAIN-STABILIZED STRUCTURES ON SILICON GROWN WITH MBE, Journal of crystal growth, 157(1-4), 1995, pp. 405-409
SOFT CLEANING BY IN VACUO ULTRAVIOLET-RADIATION COMBINED WITH MOLECULAR-HYDROGEN GAS BEFORE MOLECULAR-BEAM EPITAXIAL LAYER GROWTH
Authors: LIPPERT G THIEME HJ OSTEN HJ
Citation: G. Lippert et al., SOFT CLEANING BY IN VACUO ULTRAVIOLET-RADIATION COMBINED WITH MOLECULAR-HYDROGEN GAS BEFORE MOLECULAR-BEAM EPITAXIAL LAYER GROWTH, Journal of the Electrochemical Society, 142(1), 1995, pp. 191-195
HEAVY PHOSPHORUS DOPING IN MOLECULAR-BEAM EPITAXIAL GROWN SILICON WITH A GAP DECOMPOSITION SOURCE
Authors: LIPPERT G OSTEN HJ KRUGER D GAWORZEWSKI P EBERL K
Citation: G. Lippert et al., HEAVY PHOSPHORUS DOPING IN MOLECULAR-BEAM EPITAXIAL GROWN SILICON WITH A GAP DECOMPOSITION SOURCE, Applied physics letters, 66(23), 1995, pp. 3197-3199
LATERAL INHOMOGENEOUS BORON SEGREGATION DURING SILICON THIN-FILM GROWTH WITH MOLECULAR-BEAM EPITAXY
Authors: KRUGER D LIPPERT G KURPS R OSTEN HJ
Citation: D. Kruger et al., LATERAL INHOMOGENEOUS BORON SEGREGATION DURING SILICON THIN-FILM GROWTH WITH MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 246-252
DEPENDENCE OF THE INTERFACE SHARPNESS OF A GE SINGLE-QUANTUM-WELL ON MOLECULAR-BEAM-EPITAXIAL GROWTH-CONDITIONS
Authors: KISSINGER W OSTEN HJ LIPPERT G DIETRICH B BUGIEL E
Citation: W. Kissinger et al., DEPENDENCE OF THE INTERFACE SHARPNESS OF A GE SINGLE-QUANTUM-WELL ON MOLECULAR-BEAM-EPITAXIAL GROWTH-CONDITIONS, Journal of applied physics, 76(12), 1994, pp. 8042-8047
STATUS OF THE EDDA EXPERIMENT AT COSY
Authors: SCOBEL W BISPLINGHOFF J BOLLMANN R CLOTH P DOHRMANN F DORNER G DRUKE V ERNST J EVERSHEIM PD FILGES D GASTHUBER M GEBEL R GROSS A GROSSHARDT R HINTERBERGER F JAHN R LAHR U LANGKAU R LIPPERT G MAYERKUCKUK T MASCHUW R MERTLER G METSCH B MOSEL F SCHIECK HPG PETRY HR PRASUHN D VONPRZEWOSKI B ROHDJESS H ROSENDAAL D VONROSSEN P SCHEID H SCHIRM N SCHWANDT F STEIN H THEIS D WEBER J WIEDMANN W WOLLER K ZIEGLER R
Citation: W. Scobel et al., STATUS OF THE EDDA EXPERIMENT AT COSY, Physica scripta. T, 48(1), 1993, pp. 92-94
REDUCTION OF SPACE-CHARGE EFFECTS AND TESTS OF LARGER SAMPLES OF PHOTOMULTIPLIERS FOR THE EDDA EXPERIMENT
Authors: ACKERSTAFF K BISPLINGHOFF J BOLLMANN R CLOTH P DOHRMANN F DIEHL O DORNER G DRUKE V ENGELHARDT HJ EISENHARDT S ERNST J EVERSHEIM PD FILGES D FRITZ S GASTHUBER M GEBEL R GROSS A GROSSHARDT R HINTERBERGER F JAHN R LAHR U LANGKAU R LIPPERT G MAYERKUCKUK T MASCHUW R MERTLER G METSCH B MOSEL F SCHIECK HPG PETRY HR PRASUHN D VONPRZEWOSKI B RADTKE M ROHDJESS H ROSENDAAL D VONROSSEN P SCHEID H SCHIRM N SCHWANDT F SCOBEL W THEIS D WEBER J WIEDMANN W WOLLER K ZIEGLER R
Citation: K. Ackerstaff et al., REDUCTION OF SPACE-CHARGE EFFECTS AND TESTS OF LARGER SAMPLES OF PHOTOMULTIPLIERS FOR THE EDDA EXPERIMENT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 335(1-2), 1993, pp. 113-120
Risultati: 1-25 | 26-30