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Results: 1-17 |
Results: 17

Authors: SAKAGUCHI I NISHITANIGAMO M LOH KP YAMAMOTO K HANEDA H ANDO T
Citation: I. Sakaguchi et al., EFFECT OF OXYGEN ADDITION ON BORON INCORPORATION ON SEMICONDUCTIVE DIAMOND CVD, DIAMOND AND RELATED MATERIALS, 7(8), 1998, pp. 1144-1147

Authors: NISHITANIGAMO M TACHIBANA T KOBASHI K SAKAGUCHI I LOH KP YAMAMOTO K ANDO T
Citation: M. Nishitanigamo et al., CONFOCAL RAMAN-SPECTROSCOPIC STUDY OF THE HETEROEPITAXIAL DIAMOND GROWTH ON PT(111), DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 783-788

Authors: LOH KP FOORD JS JACKMAN RB
Citation: Kp. Loh et al., REACTIVE CHEMISTRY OF C2HX SPECIES ON CVD DIAMOND, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 243-246

Authors: JONES FH MOLLOY AB LOH KP FOORD JS JACKMAN RB
Citation: Fh. Jones et al., PHOTOELECTRON-SPECTROSCOPY STUDIES OF BARIUM FILMS ON DIAMOND WITH RESPECT TO THE MODIFICATION OF NEGATIVE ELECTRON-AFFINITY CHARACTERISTICS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 651-655

Authors: LOH KP SAKAGUCHI I NISHITANIGAMO M TANIGUCHI T ANDO T
Citation: Kp. Loh et al., HYDROGEN-INDUCED SURFACE STRUCTURING OF A CUBIC BORON NITRIDE(100) FACE STUDIED BY LOW-ENERGY-ELECTRON DIFFRACTION AND ELECTRON SPECTROSCOPIC TECHNIQUES, Physical review. B, Condensed matter, 57(12), 1998, pp. 7266-7274

Authors: FOORD JS LOH KP JACKMAN RB
Citation: Js. Foord et al., SURFACE STUDIES OF THE REACTIVITY OF METHYL, ACETYLENE AND ATOMIC-HYDROGEN AT CVD DIAMOND SURFACES, Surface science, 399(1), 1998, pp. 1-14

Authors: NISHITANIGAMO M SAKAGUCHI I LOH KP
Citation: M. Nishitanigamo et al., CONFOCAL RAMAN-SPECTROSCOPIC OBSERVATION OF HEXAGONAL DIAMOND FORMATION FROM DISSOLVED CARBON IN NICKEL UNDER CHEMICAL-VAPOR-DEPOSITION CONDITIONS, Applied physics letters, 73(6), 1998, pp. 765-767

Authors: TAKAMI T KUSUNOKI I SUZUKI K LOH KP NISHITANIGAMO M SAKAGUCHI I TANIGUCHI T ANDO T
Citation: T. Takami et al., 2 DIFFERENT DOMAINS IN A CUBIC BORON-NITRIDE(111) SURFACE OBSERVED BYFRICTION FORCE MICROSCOPY, Applied physics letters, 73(19), 1998, pp. 2733-2735

Authors: SAKAGUCHI I NISHITANIGAMO M LOH KP HISHITA S HANEDA H ANDO T
Citation: I. Sakaguchi et al., SUPPRESSION OF SURFACE CRACKS ON (111) HOMOEPITAXIAL DIAMOND THROUGH IMPURITY LIMITATION BY OXYGEN ADDITION, Applied physics letters, 73(18), 1998, pp. 2675-2677

Authors: LOH KP NISHITANIGAMO M SAKAGUCHI I TANIGUCHI T ANDO T
Citation: Kp. Loh et al., THERMAL-STABILITY OF THE NEGATIVE ELECTRON-AFFINITY CONDITION ON CUBIC BORON-NITRIDE, Applied physics letters, 72(23), 1998, pp. 3023-3025

Authors: LOH KP FOORD JS EGDELL RG JACKMAN RB
Citation: Kp. Loh et al., TUNING THE ELECTRON-AFFINITY OF CVD DIAMOND WITH ADSORBED CESIUM AND OXYGEN LAYERS, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 874-878

Authors: LOH KP FOORD JS JACKMAN RB
Citation: Kp. Loh et al., DIAMOND GROWTH CHEMISTRY - ITS OBSERVATION USING REAL-TIME IN-SITU MOLECULAR-BEAM SCATTERING TECHNIQUES, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 219-223

Authors: LOH KP SAKAGUCHI I NISHITANIGAMO M TANIGUCHI T ANDO T
Citation: Kp. Loh et al., SURFACE-STRUCTURE OF SINGLE-CRYSTAL CUBIC BORON-NITRIDE(111) STUDIED BY LEED, EELS, AND AES, Physical review. B, Condensed matter, 56(20), 1997, pp. 12791-12794

Authors: SAKAGUCHI I NISHITANIGAMO M LOH KP HANEDA H HISHITA S ANDO T
Citation: I. Sakaguchi et al., SILICON INCORPORATION INTO CHEMICAL-VAPOR-DEPOSITION DIAMOND - A ROLEOF OXYGEN, Applied physics letters, 71(5), 1997, pp. 629-631

Authors: LOH KP FOORD JS JACKMAN RB SINGH NK
Citation: Kp. Loh et al., GROWTH-STUDIES OF THIN-FILM DIAMOND USING MOLECULAR-BEAM TECHNIQUES, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 231-235

Authors: FOORD JS LOH KP SINGH NK JACKMAN RB DAVIES GJ
Citation: Js. Foord et al., GROWTH AND MECHANISTIC STUDIES OF DIAMOND FORMATION BY CHEMICAL BEAM EPITAXY USING METHYL AND ACETYLENE PRECURSORS, Journal of crystal growth, 164(1-4), 1996, pp. 208-213

Authors: LOH KP KINGSLEY CR FOORD JS JACKMAN RB
Citation: Kp. Loh et al., THE INTERACTION OF AZOMETHANE WITH SI(100), Surface science, 341(1-2), 1995, pp. 92-102
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