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Results:
1-9
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Results: 9
Authors:
LONDOS CA
SARLIS NV
FYTROS LG
Citation: Ca. Londos et al., INFRARED STUDIES OF DEFECTS FORMED DURING POSTIRRADIATION ANNEALS OF CZOCHRALSKI SILICON, Journal of applied physics, 84(7), 1998, pp. 3569-3573
Authors:
LONDOS CA
SARLIS NV
FYTROS LG
Citation: Ca. Londos et al., ISOCHRONAL ANNEALING STUDIES OF THE OXYGEN-VACANCY CENTERS IN NEUTRON-IRRADIATED SI, Physica status solidi. a, Applied research, 163(2), 1997, pp. 325-335
Authors:
SARLIS NV
LONDOS CA
FYTROS LG
Citation: Nv. Sarlis et al., ORIGIN OF INFRARED BANDS IN NEUTRON-IRRADIATED SILICON, Journal of applied physics, 81(4), 1997, pp. 1645-1650
Authors:
BINNS MJ
LONDOS CA
MCQUAID SA
NEWMAN RC
SEMALTIANOS NG
TUCKER JH
Citation: Mj. Binns et al., NOVEL ASPECTS OF OXYGEN DIFFUSION IN SILICON, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 347-353
Authors:
LONDOS CA
SARLIS N
FYTROS LG
PAPASTERGIOU K
Citation: Ca. Londos et al., PRECURSOR DEFECT TO THE VACANCY-DIOXYGEN CENTER IN SI, Physical review. B, Condensed matter, 53(11), 1996, pp. 6900-6903
Authors:
GUSKOS N
LIKODIMOS V
LONDOS CA
PSYCHARIS V
MITROS C
KOUFOUDAKIS A
GAMARISEALE H
WINDSCH W
METZ H
Citation: N. Guskos et al., STRUCTURAL, MAGNETIC, AND EPR STUDIES OF BACUO2+X, Journal of solid state chemistry, 119(1), 1995, pp. 50-61
Authors:
MCQUAID SA
BINNS MJ
LONDOS CA
TUCKER JH
BROWN AR
NEWMAN RC
Citation: Sa. Mcquaid et al., OXYGEN LOSS DURING THERMAL DONOR FORMATION IN CZOCHRALSKI SILICON - NEW INSIGHTS INTO OXYGEN DIFFUSION MECHANISMS, Journal of applied physics, 77(4), 1995, pp. 1427-1442
Authors:
LONDOS CA
GEORGIOU GI
FYTROS LG
PAPASTERGIOU K
Citation: Ca. Londos et al., INTERPRETATION OF INFRARED DATA IN NEUTRON-IRRADIATED SILICON, Physical review. B, Condensed matter, 50(16), 1994, pp. 11531-11534
Authors:
LONDOS CA
Citation: Ca. Londos, DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF A DEEP TRAP IN FLOAT-ZONE SI, Journal of applied physics, 75(1), 1994, pp. 645-647
Risultati:
1-9
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