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Results: 1-11 |
Results: 11
HIGH-PERFORMANCE SUBSTRATE-REMOVED INGAAS SCHOTTKY PHOTODETECTORS
Authors: SPAZIANI SM VACCARO K LORENZO JP
Citation: Sm. Spaziani et al., HIGH-PERFORMANCE SUBSTRATE-REMOVED INGAAS SCHOTTKY PHOTODETECTORS, IEEE photonics technology letters, 10(8), 1998, pp. 1144-1146
INSULATOR-METAL TRANSITION VERSUS TEMPERATURE FOR THE CDW OF THE 1D ADIABATIC HOLSTEIN MODEL
Authors: LORENZO JP AUBRY S
Citation: Jp. Lorenzo et S. Aubry, INSULATOR-METAL TRANSITION VERSUS TEMPERATURE FOR THE CDW OF THE 1D ADIABATIC HOLSTEIN MODEL, Physica. D, 113(2-4), 1998, pp. 276-282
GIGAHERTZ INGAAS-BASED VERTICAL SCHOTTKY DIODE OPTICAL-DETECTORS BY SUBSTRATE REMOVAL
Authors: VACCARO K SPAZIANI SM MARTIN EA LORENZO JP
Citation: K. Vaccaro et al., GIGAHERTZ INGAAS-BASED VERTICAL SCHOTTKY DIODE OPTICAL-DETECTORS BY SUBSTRATE REMOVAL, IEEE journal of quantum electronics, 34(6), 1998, pp. 991-999
CONCURRENT GOUT AND MYCOBACTERIUM-TUBERCULOSIS ARTHRITIS
Authors: LORENZO JP CSUKA ME DERFUS BA GOTOFF RA MCCARTHY GM
Citation: Jp. Lorenzo et al., CONCURRENT GOUT AND MYCOBACTERIUM-TUBERCULOSIS ARTHRITIS, Journal of rheumatology, 24(1), 1997, pp. 184-186
CADMIUM-SULFIDE SURFACE STABILIZATION FOR INP-BASED OPTOELECTRONIC DEVICES
Authors: VACCARO K DAVIS A DAUPLAISE HM SPAZIANI SM MARTIN EA LORENZO JP
Citation: K. Vaccaro et al., CADMIUM-SULFIDE SURFACE STABILIZATION FOR INP-BASED OPTOELECTRONIC DEVICES, Journal of electronic materials, 25(4), 1996, pp. 603-609
OPTOELECTRONIC PROPERTIES OF TRANSITION-METAL AND RARE-EARTH-DOPED EPITAXIAL LAYERS ON INP FOR MAGNETOOPTICS
Authors: STADLER BJH VACCARO K DAVIS A RAMSEYER GO MARTIN EA DAUPLAISE HM THEODORE LM LORENZO JP
Citation: Bjh. Stadler et al., OPTOELECTRONIC PROPERTIES OF TRANSITION-METAL AND RARE-EARTH-DOPED EPITAXIAL LAYERS ON INP FOR MAGNETOOPTICS, Journal of electronic materials, 25(4), 1996, pp. 709-713
ANALYSIS OF THIN CDS LAYERS ON INP FOR IMPROVED METAL-INSULATOR-SEMICONDUCTOR DEVICES
Authors: DAUPLAISE HM VACCARO K DAVIS A RAMSEYER GO LORENZO JP
Citation: Hm. Dauplaise et al., ANALYSIS OF THIN CDS LAYERS ON INP FOR IMPROVED METAL-INSULATOR-SEMICONDUCTOR DEVICES, Journal of applied physics, 80(5), 1996, pp. 2873-2882
BACKSIDE ILLUMINATION PROCESSING TECHNOLOGY FOR INGAAS INALAS/INP PHOTOFETS AND MSMS/
Authors: MARTIN EA VACCARO K SPAZIANI SM LORENZO JP
Citation: Ea. Martin et al., BACKSIDE ILLUMINATION PROCESSING TECHNOLOGY FOR INGAAS INALAS/INP PHOTOFETS AND MSMS/, Microelectronics, 26(5), 1995, pp. 497-505
INDIUM-PHOSPHIDE PASSIVATION USING THIN-LAYERS OF CADMIUM-SULFIDE
Authors: VACCARO K DAUPLAISE HM DAVIS A SPAZIANI SM LORENZO JP
Citation: K. Vaccaro et al., INDIUM-PHOSPHIDE PASSIVATION USING THIN-LAYERS OF CADMIUM-SULFIDE, Applied physics letters, 67(4), 1995, pp. 527-529
SOLUBILITY OF CO2 IN AQUEOUS-SOLUTIONS OF SACCHAROSE, GLUCOSE, FRUCTOSE, AND GLYCERIN
Authors: UNA GV ROMERO FC GONCALVES GP LORENZO JP
Citation: Gv. Una et al., SOLUBILITY OF CO2 IN AQUEOUS-SOLUTIONS OF SACCHAROSE, GLUCOSE, FRUCTOSE, AND GLYCERIN, Journal of chemical and engineering data, 39(4), 1994, pp. 639-642
INDIUM-PHOSPHIDE MISIFET PROCESSING USING WET CHEMICAL SURFACE PRETREATMENTS AND EVAPORATED THIN SILICON INTERLAYERS
Authors: MARTIN EA VACCARO K DAUPLAISE HM WATERS W LORENZO JP
Citation: Ea. Martin et al., INDIUM-PHOSPHIDE MISIFET PROCESSING USING WET CHEMICAL SURFACE PRETREATMENTS AND EVAPORATED THIN SILICON INTERLAYERS, Electronics Letters, 30(4), 1994, pp. 364-365
Risultati: 1-11 |