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Results: 1-17 |
Results: 17
STENCIL MASK DISTORTION CONTROL USING NONSYMMETRIC PERFORATION RINGS
Authors: SPRAGUE M SEMKE W ENGELSTAD R LOVELL E CHALUPKA A LOSCHNER H STENGL G
Citation: M. Sprague et al., STENCIL MASK DISTORTION CONTROL USING NONSYMMETRIC PERFORATION RINGS, Microelectronic engineering, 42, 1998, pp. 225-228
ION ABSORBING STENCIL MASK COATINGS FOR ION-BEAM LITHOGRAPHY
Authors: WASSON JR TORRES JL RAMPERSAD HR WOLFE JC RUCHHOEFT P HERBORDT M LOSCHNER H
Citation: Jr. Wasson et al., ION ABSORBING STENCIL MASK COATINGS FOR ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2214-2217
STOCHASTIC COULOMB INTERACTIONS IN ION PROJECTION LITHOGRAPHY SYSTEMSWITH ABERRATION-BROADENED CROSSOVER
Authors: KRUIT P BARTH JE LAMMER G CHALUPKA A VONACH H LOSCHNER H STENGL G
Citation: P. Kruit et al., STOCHASTIC COULOMB INTERACTIONS IN ION PROJECTION LITHOGRAPHY SYSTEMSWITH ABERRATION-BROADENED CROSSOVER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2369-2372
DEEP-ULTRAVIOLET RESISTS AZ DX-561 AND AZ DX-1300P APPLIED FOR ELECTRON-BEAM AND MASKED ION-BEAM LITHOGRAPHY
Authors: HUDEK P KOSTIC I BELOV M RANGELOW IW SHI F PAWLOWSKI G SPIESS W BUSCHBECK H CEKAN E EDER S LOSCHNER H
Citation: P. Hudek et al., DEEP-ULTRAVIOLET RESISTS AZ DX-561 AND AZ DX-1300P APPLIED FOR ELECTRON-BEAM AND MASKED ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2550-2554
ANALYSIS OF STENCIL MASK DISTORTION IN ION PROJECTION LITHOGRAPHY
Authors: DIDENKO L MELNGAILIS J LOSCHNER H STENGL G CHALUPKA A SHIMKUNAS A
Citation: L. Didenko et al., ANALYSIS OF STENCIL MASK DISTORTION IN ION PROJECTION LITHOGRAPHY, Microelectronic engineering, 35(1-4), 1997, pp. 443-446
MASKED ION-BEAM LITHOGRAPHY FOR PROXIMITY PRINTING
Authors: HAMMEL E LOSCHNER H STENGL G BUSCHBECK H CHALUPKA A VONACH H CEKAN E FALLMANN W PASCHKE F STANGL G
Citation: E. Hammel et al., MASKED ION-BEAM LITHOGRAPHY FOR PROXIMITY PRINTING, Microelectronic engineering, 30(1-4), 1996, pp. 241-244
SILICON STENCIL MASKS FOR MASKED ION-BEAM LITHOGRAPHY PROXIMITY PRINTING
Authors: RANGELOW IW SHI F HUDEK P KOSTIC I HAMMEL E LOSCHNER H STENGL G CEKAN E
Citation: Iw. Rangelow et al., SILICON STENCIL MASKS FOR MASKED ION-BEAM LITHOGRAPHY PROXIMITY PRINTING, Microelectronic engineering, 30(1-4), 1996, pp. 257-260
REACTIVE ION ETCHING FOR MICROELECTRICAL MECHANICAL SYSTEM FABRICATION
Authors: RANGELOW IW LOSCHNER H
Citation: Iw. Rangelow et H. Loschner, REACTIVE ION ETCHING FOR MICROELECTRICAL MECHANICAL SYSTEM FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2394-2399
CONTROL OF TEMPERATURE-GRADIENTS AND DISTORTION OF ION PROJECTION LITHOGRAPHY MASKS
Authors: BIRMAN A LEVUSH B MELNGAILIS J LOSCHNER H STENGL G
Citation: A. Birman et al., CONTROL OF TEMPERATURE-GRADIENTS AND DISTORTION OF ION PROJECTION LITHOGRAPHY MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2584-2587
DISTORTION ANALYSIS OF STENCIL MASKS WITH STRESS-RELIEF STRUCTURES
Authors: WOLFE JC CHALUPKA A LOSCHNER H STENGL G VONACH H SHIMKUNAS AR MAUGER PE
Citation: Jc. Wolfe et al., DISTORTION ANALYSIS OF STENCIL MASKS WITH STRESS-RELIEF STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2613-2617
EVALUATION OF CRITICAL DESIGN PARAMETERS OF AN ION PROJECTOR FOR 1-GBIT DRAM PRODUCTION
Authors: BRUNGRE WH LOSCHNER H STENGL G FALLMANN W FINKELSTEIN W MELNGAILIS J
Citation: Wh. Brungre et al., EVALUATION OF CRITICAL DESIGN PARAMETERS OF AN ION PROJECTOR FOR 1-GBIT DRAM PRODUCTION, Microelectronic engineering, 27(1-4), 1995, pp. 323-326
NOVEL ELECTROSTATIC COLUMN FOR ION PROJECTION LITHOGRAPHY
Authors: CHALUPKA A STENGL G BUSCHBECK H LAMMER G VONACH H FISCHER R HAMMEL E LOSCHNER H NOWAK R WOLF P FINKELSTEIN W HILL RW BERRY IL HARRIOTT LR MELNGAILIS J RANDALL JN WOLFE JC STROH H WOLLNIK H MONDELLI AA PETILLO JJ LEUNG K
Citation: A. Chalupka et al., NOVEL ELECTROSTATIC COLUMN FOR ION PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3513-3517
EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS
Authors: HAMMEL E CHALUPKA A FEGERL J FISCHER R LAMMER G LOSCHNER H MALEK L NOWAK R STENGL G VONACH H WOLF P BRUNGER WH BUCHMANN LM TORKLER M CEKAN E FALLMANN W PASCHKE F STANGL G THALINGER F BERRY IL HARRIOTT LR FINKELSTEIN W HILL RW
Citation: E. Hammel et al., EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3533-3538
PROJECTION ION-BEAM LITHOGRAPHY
Authors: LOSCHNER H STENGL G CHALUPKA A FEGERL J FISCHER R HAMMEL E LAMMER G MALEK L NOWAK R TRAHER C VONACH H WOLF P HILL RW
Citation: H. Loschner et al., PROJECTION ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2409-2415
ION PROJECTION LITHOGRAPHY FOR VACUUM MICROELECTRONICS
Authors: LOSCHNER H STENGL G CHALUPKA A FEGERL J FISCHER R LAMMER G MALEK L NOWAK R TRAHER C WOLF P
Citation: H. Loschner et al., ION PROJECTION LITHOGRAPHY FOR VACUUM MICROELECTRONICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 487-492
ION PROJECTOR DISTORTION STABILITY AND WAFER EXPOSURES UNDER ELECTRONIC ALIGNMENT (PATTERN LOCK) CONDITIONS
Authors: STENGL G BOSCH G CHALUPKA A FEGERL J FISCHER R LAMMER G LOSCHNER H MALEK L NOWAK R TRAHER C WOLF P
Citation: G. Stengl et al., ION PROJECTOR DISTORTION STABILITY AND WAFER EXPOSURES UNDER ELECTRONIC ALIGNMENT (PATTERN LOCK) CONDITIONS, Microelectronic engineering, 21(1-4), 1993, pp. 187-190
DISTORTION EVALUATION OF NICKEL STENCIL MASKS WITH THE HELP OF ION PROXIMITY EXPOSURES AND REGISTRATION MEASUREMENTS ON THE LEITZ LMS-2000
Authors: RANGELOW IW LAHR V KASSING R BLASINGBANGERT C ROTH KD BOSCH G CHALUPKA A FISCHER R LOSCHNER H NOWAK R TRAHER C STENGL G KRAUS H BAYER E
Citation: Iw. Rangelow et al., DISTORTION EVALUATION OF NICKEL STENCIL MASKS WITH THE HELP OF ION PROXIMITY EXPOSURES AND REGISTRATION MEASUREMENTS ON THE LEITZ LMS-2000, Microelectronic engineering, 21(1-4), 1993, pp. 359-362
Risultati: 1-17 |